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Nanoscale Measurements of Electronic Properties in Organic Thin Film Transistors

Published online by Cambridge University Press:  01 February 2011

Oren Tal ,
Yossi Rosenwaks ,
Yohai Roichman ,
Nir Tessler ,
Calvin K. Chan  and
Antoine Kahn
Oren Tal
Affiliation:
Department of Physical Electronics, Faculty of Engineering, Tel Aviv University, Tel Aviv 69978, Israel.
Yossi Rosenwaks
Affiliation:
Department of Physical Electronics, Faculty of Engineering, Tel Aviv University, Tel Aviv 69978, Israel.
Yohai Roichman
Affiliation:
Department of Electrical Engineering Dept., Technion Israel institute of technology, Haifa 32000, Israel.
Nir Tessler
Affiliation:
Department of Electrical Engineering Dept., Technion Israel institute of technology, Haifa 32000, Israel.
Calvin K. Chan
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton NJ 08544, USA
Antoine Kahn
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton NJ 08544, USA
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Abstract

Kelvin probe force microscopy was used for extraction of the threshold and the pinch off voltages in organic thin film transistors. The first was determined by direct detection of the charge accumulation onset and the latter by a direct observation of the pinch off region formation. In addition, an effective threshold voltage shift can be extracted from the pinch-off voltage as a function of charge concentration. The dependence of the effective threshold voltage on the gate voltage must be considered when calculating charge carrier concentrations in organic thin film transistors.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 871: Symposium I – Organic Thin-Film Electronics , 2005 , I4.5
Copyright
Copyright © Materials Research Society 2005

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