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Electrical Characteristics of Metal - (La0.27Y0.73)2O3 - Silicon Capacitors

Published online by Cambridge University Press:  01 February 2011

E. J. Preisler ,
N. A. Bojarczuk  and
S. Guha
E. J. Preisler
Affiliation:
IBM T. J. Watson Research Laboratory, 1101 Kitchawan Rd., Yorktown Hts. NY 10598
N. A. Bojarczuk
Affiliation:
IBM T. J. Watson Research Laboratory, 1101 Kitchawan Rd., Yorktown Hts. NY 10598
S. Guha
Affiliation:
IBM T. J. Watson Research Laboratory, 1101 Kitchawan Rd., Yorktown Hts. NY 10598
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Abstract

An investigation of metal-insulator-silicon capacitors, utilizing single crystal (La0.27Y0.73)2O3 as the insulator is presented. Crystalline insulators are of interest because of the possibilities of obtaining an atomically flat interface and entirely eliminating the presence of dangling bonds at the interface.

Capacitance – voltage measurements performed on MIS capacitors demonstrate a dielectric constant of 11.4 and suggest the absence of any interfacial silicon oxide layer. The equivalent oxide thickness of the sample with the thinnest dielectric layer is 15 Å. The density of interface states for the best samples is found to be in the mid 1012 cm−2eV−1 range and did not vary significantly after typical annealing treatments.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 786: Symposium E – Fundamentals of Novel Oxide/Semiconductor Interfaces , 2003 , E7.7
Copyright
Copyright © Materials Research Society 2004

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