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Effect of Preamorphization Depth on Channeling Tails in B+ and As+ Implanted Silicon

Published online by Cambridge University Press:  25 February 2011

I. Suni ,
H. Rqnkainen ,
S. Eranen ,
T. Murto ,
Ch. Krontiras  and
M. Finetti
I. Suni
Affiliation:
Technical Research Centre of Finland, Otakaari 7 B, 02150 Espoo Finland
H. Rqnkainen
Affiliation:
Technical Research Centre of Finland, Otakaari 7 B, 02150 Espoo Finland
S. Eranen
Affiliation:
Technical Research Centre of Finland, Otakaari 7 B, 02150 Espoo Finland
T. Murto
Affiliation:
Technical Research Centre of Finland, Otakaari 7 B, 02150 Espoo Finland
Ch. Krontiras
Affiliation:
Technical Research Centre of Finland, Otakaari 7 B, 02150 Espoo Finland
M. Finetti
Affiliation:
CNR Istituto Lamel, Via Castagnoli 1, 4026 Bologna, Italy
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Abstract

We have studied the effects of ion-channeling in B+ and As+ implanted Si which has been preamorphized to different depths by 28 Si+ irradiation at 60 keV and 180 keV. It is shown that the junctions for incompletely amorphized substrates are only slightly deeper than predicted by LSS theory. For preamorphized layers extending beyofnd-the predicted junction depths the implantations of 25 keV B+ and 120 keV 75As+ with a dose of 5-1015 cm-2 yield junction depths in the order of 2200 - 2300 Å after furnace annealing at 700°C for 30 minutes.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 45: Symposium A – Ion Beam Processes in Advanced Electronic Materials and Device Technology , 1985 , 39
Copyright
Copyright © Materials Research Society 1985

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References

REFERENCES

1. Fichtner, W., Levin, R.M., and Taylor, G. W., IEEE Electron Device Lett., EDL–3, 34 (1982)Google Scholar
2. Beanland, D.G., Solid-State Electronics 21, 537 (1978)Google Scholar
3. Suni, I., Shreter, U., Nicolet, M-A., and Baker, J.E., J. Appl. Phys. 56, 273 (1984)Google Scholar
4. Liu, T.M. and Oldham, W.G., IEEE Electron Device Lett., EDL–5, 299 (1984)Google Scholar
5. Liu, T.M. and Oldham, W.G., IEEE Electron Devic Lett., EDL–4, 59 (1983)CrossRefGoogle Scholar
6. Tsaur, B-Y. and Anderson, C.H. Jr, J. Appl. Phys. 54, 6336 (1983)Google Scholar
7. Solmi, S., Landi, E., and Negrini, P., IEEE Electron Device Lett. FDL–5, 359 (1984)CrossRefGoogle Scholar
8. Smith, B., Ion Implantation Range Data for Silicon and Germanium Device Technologies, Research Studies, Forest Grove, OR, 1977.Google Scholar
9. Wilson, R.G., J. Appl. Phys. 52, 3985 (1981)Google Scholar