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Microscopic Identification of Anion Antisite Defects in GaAs by Optically Detected Magnetic Resonance

Published online by Cambridge University Press:  28 February 2011

J. Martin Spaeth ,
Detlev M. Hofmann  and
Bruno K. Meyer
J. Martin Spaeth
Affiliation:
University of Paderborn, Fachbereich Physik, Warburger Str. 100 A, D-4790 Paderborn, Federal Republic of Germany
Detlev M. Hofmann
Affiliation:
University of Paderborn, Fachbereich Physik, Warburger Str. 100 A, D-4790 Paderborn, Federal Republic of Germany
Bruno K. Meyer
Affiliation:
University of Paderborn, Fachbereich Physik, Warburger Str. 100 A, D-4790 Paderborn, Federal Republic of Germany
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Abstract

Anion antisite defects in GaAs have been identified so far by their electron spin resonance (ESR) spectrum as one specific point defect, which was found in as-grown, plastically deformed and electron and neutron irradiated GaAs. By optical detection of electron nuclear double resonance (ODENDOR),it could be shown that several species of anion antisite defects exist having practically the same ESR spectrum, which cannot any longer be taken as “fingerprint” identification for this defect. Recent results of ODESR and ODENDOR investigations in as-grown, plastically deformed and electron irradiated GaAs are reviewed. It is also pointed out that the spin lattice relaxation time is an important quantity for the microscopic identification and the properties of anion antisite defects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 46: Symposium B – Microscopic Identification of Electronic Defects in Semiconductors , 1985 , 185
Copyright
Copyright © Materials Research Society 1985

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References

[1] Wagner, R.J., Krebs, J.J., Stauss, G.H. and White, A.M., Solid State Commun. 36, 15 (1980)CrossRefGoogle Scholar
[2] Weber, E.R., Ennen, H., Kaufmann, U., Windscheif, J., Schneider, J. and Wosinski, T., J. Appl. Phys. 53, 6140 (1982)Google Scholar
[3] Wbrner, R., Kaufmann, U. and Schneider, J., Applied Physics Letters 40, 141 (1982)CrossRefGoogle Scholar
[4] Feher, G., Phys. Rev. 114, 1219 and 1245 (1959)Google Scholar
[5] Meyer, B.K., Spaeth, J.-M. and Scheffler, M., Phys. Rev. Lett. 52, 851 (1984)Google Scholar
[6] Hofmann, D.M., Meyer, B.K., Lohse, F. and Spaeth, J.-M., Phys. Rev. Lett. 53, 1187 (1984)Google Scholar
[7] Weber, E.R., private communicationGoogle Scholar
[8] Slichter, C.P., Principles of Magnetic Resonance, Harper & Row, N.Y., 1963, Chapter 7Google Scholar
[9] Bachelet, G.B., SchlUter, M. and Baraff, G.A., Phys. Rev. B27, 2545 (1983)Google Scholar
[10] Newman, R.C., private communicationGoogle Scholar
[11] Honig, A. and Stupp, E., Phys. Rev. 117, 69 (1960)Google Scholar
[12] Martin, G.M., Appl. Phys. Lett. 39, 747 (1981)Google Scholar
[13] Kaminska, M., Skowronski, M., Lagowski, J., Parsey, J.M. and Gatos, H.C., Appl. Phys. Lett. 43, 302 (1983)Google Scholar
[14] Fowler, W.B., Physics of Color Centres, Chapter 6, 1968, Academ. Press, New York Google Scholar
[15] Vigneron, P., Scheffler, M. and Pantelides, S.T., Physica (Utrecht) 117 & 118B, 137 (1983)Google Scholar
[16] Ahlers, F.J., Lohse, F., Spaeth, J.-M. and Mollenauer, L.F., Phys. Rev. B28, 1249 (1983)Google Scholar
[17] Spaeth, J.-M. and Meyer, B.K., Festkbrperprobleme - Advances in Solid State Physics, XXV, 1985 Google Scholar
[18] Seidel, H., Z. Physik 165, 218 (1961)Google Scholar
[19] Spaeth, J.-M., Z. Physik 192, 107 (1966)Google Scholar
[20] Spaeth, J.-M., in: “Defects and their structure in nonmetallic solids”, Ed. Henderson, B. and Hughes, A.E., Plenum Press, New York, 1976, p. 155 Google Scholar
[21] Feuchtwang, T.E., Phys. Rev. 126, 1628 (1962)Google Scholar
[22] In ref. [6] due to a misprint a was given to be 155 MHz. The slight difference in b and q here are due to a new analysis based on more experimental data.Google Scholar