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Plasma Enhanced Chemical Vapor Deposition of Dielectric Films: Correlation of Stress to Film Structure and Plasma Characteristics

Published online by Cambridge University Press:  16 February 2011

Radhika Srinivasan ,
B. C. Nguyen  and
A. P. Short
Radhika Srinivasan
Affiliation:
IBM East Fishkill Facility, Hopewell Junction, NY12533.
B. C. Nguyen
Affiliation:
Applied Materials, Santa Clara, CA95054.
A. P. Short
Affiliation:
IBM East Fishkill Facility, Hopewell Junction, NY12533.
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Abstract

Stress in dielectric films, including silicon dioxide, borosilicate glass, and silicon nitride, deposited using Plasma Enhanced Chemical Vapor Deposition have been studied. In each case the total stress was found to be strongly dependent on processing conditions. Deposition rates and film characteristics, such as refractive index, -OH content, (in the case of SiO2), total H content, Si-H and N-HI concentration (in the case of nitride), boron concentration (for BSG), have also been determined as fuctions of processing parameters. In addition, the emission spectra from the plasma itself has been studied. Correlations have been established whereever relevant.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 188: Symposium K – Thin Films: Stresses and Mechanical Properties II , 1990 , 73
Copyright
Copyright © Materials Research Society 1990

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References

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