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The Study of Oxide Planarization Using a Grindstone

Published online by Cambridge University Press:  10 February 2011

Hiroyuki Yano ,
Katsuya Okumura ,
Fumito Shoji ,
Yutaka Wada ,
Hirokuni Hiyama  and
Norio Kimura
Hiroyuki Yano
Affiliation:
Microelectronics Engineering Laboratory, TOSHIBA CORPORATION, Yokohama, JAPAN;
Katsuya Okumura
Affiliation:
Microelectronics Engineering Laboratory, TOSHIBA CORPORATION, Yokohama, JAPAN;
Fumito Shoji
Affiliation:
Microelectronics Engineering Laboratory, TOSHIBA CORPORATION, Yokohama, JAPAN;
Yutaka Wada
Affiliation:
CMP Division, EBARA CORPORATION, Fujisawa, JAPAN
Hirokuni Hiyama
Affiliation:
CMP Division, EBARA CORPORATION, Fujisawa, JAPAN
Norio Kimura
Affiliation:
CMP Division, EBARA CORPORATION, Fujisawa, JAPAN
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Abstract

Oxide planarization using a specially fabricated “grindstone” was investigated. Using the grindstone, better planarity compared with the conventional CMP technique was demonstrated. Interestingly, it was also found that the oxide removal rate became very slow after the oxide surface became planar. This self-stop was thought to be influenced by the isolated abrasives from the grindstone. The dependence on the tool structure and the conditioning was investigated to prove the model. Also the defect issue is presented in this paper.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 566: Symposium P – Chemical-Mechanical Poilshing-Fundamentals and Challenges , 1999 , 19
Copyright
Copyright © Materials Research Society 2000

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References

REFERENCES

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