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Stress Assisted Grain Growth in Ultrafine and Nanocrystalline Aluminum Revealed by in-situ TEM

Published online by Cambridge University Press:  01 February 2011

Frederic Mompiou ,
Marc Legros  and
Daniel Caillard
Frederic Mompiou
Affiliation:
mompiou@cemes.fr, CEMES-CNRS, -, 29, rue Marvig, BP4347, Toulouse, 31055, France, 33 562257987, 33562257999
Marc Legros
Affiliation:
legros@cemes.fr, CEMES-CNRS, Toulouse, 31055, France
Daniel Caillard
Affiliation:
caillard@cemes.fr, CEMES-CNRS, Toulouse, 31055, France
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Abstract

In-situ straining experiments on nanocrystalline (nc) and ultra fine grain (UFG) Aluminum were performed at room and intermediate temperatures. Both materials exhibit significant stress assisted grain growth. The strain induced by grain boundary motion has been measured in UFG Al, and was found to be on the order of a few percents. These results cannot be interpreted solely within the framework of Displacement Shift Complete (DSC) dislocation motion. We propose here that GB motion occurs via both shuffling and secondary DSC dislocation motion.

Keywords

transmission electron microscopy (TEM)crystal growthgrain boundaries
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1086: Symposium U – Mechanics of Nanoscale Materials , 2008 , 1086-U09-04
Copyright
Copyright © Materials Research Society 2008

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