Hostname: page-component-76fb5796d-zzh7m Total loading time: 0 Render date: 2024-04-26T11:41:54.569Z Has data issue: false hasContentIssue false
  • English
  • Français

Negative Magnetoresistance in (Bi,Pb)2Sr3Co2O9 Layered Cobalt Oxides

Published online by Cambridge University Press:  10 February 2011

I. Tsukada ,
T. Yamamoto ,
M. Takagi ,
T. Tsubone  and
K. Uchinokura
I. Tsukada
Affiliation:
Department of Applied Physics, The University of Tokyo, 7–3–1 Hongo, Bunkyo-ku, Tokyo 113, Japan, tsukada@ap.t.u-tokyo.ac.jp
T. Yamamoto
Affiliation:
Department of Applied Physics, The University of Tokyo, 7–3–1 Hongo, Bunkyo-ku, Tokyo 113, Japan, tsukada@ap.t.u-tokyo.ac.jp
M. Takagi
Affiliation:
Department of Applied Physics, The University of Tokyo, 7–3–1 Hongo, Bunkyo-ku, Tokyo 113, Japan, tsukada@ap.t.u-tokyo.ac.jp
T. Tsubone
Affiliation:
Department of Applied Physics, The University of Tokyo, 7–3–1 Hongo, Bunkyo-ku, Tokyo 113, Japan, tsukada@ap.t.u-tokyo.ac.jp
K. Uchinokura
Affiliation:
Department of Applied Physics, The University of Tokyo, 7–3–1 Hongo, Bunkyo-ku, Tokyo 113, Japan, tsukada@ap.t.u-tokyo.ac.jp
Get access

Abstract

Transport and magnetic properties of layered cobalt oxide (BiPb)2Sr3Co2O9 are investigated in detail under magnetic field up to 8 T. Parent compound, Bi2Sr3Co2O9, is a typical band insulator with Co ions being in a low-spin 3+ state because of the well-separated dε and dγ levels possibly due to a strong crystal field. We have tried to introduce holes mainly by Pb substitution for Bi. The hole-doped sample shows metallic behavior in a resistivity measurement between 300 and 30 K. Below 30 K, however, the resisitivity increases. Under the magnetic field the resistivity is strongly suppressed in this region. We observed more than 30% resistivity drop at 2 K under H = 8 T, which is comparable to insulating (La,Sr)CoO3 system. We discuss the mechanism of hole doping and the origin of negative magnetoresistance with tranport and magnetic properties, and point out that the conventional double-exchange mechanism cannot be applied to this system. This means that some new mechanism is necessary to explain this phenomenon.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 494: Symposium V – Science & Technology of Magnetic Oxides , 1997 , 119
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Tarascon, J. M., Miceli, P. F., Barboux, P., Hwang, D. M., Hull, G. W., Giroud, M., Greene, L. H., LePage, Y., McKinnon, W. R., Tselepis, E., Pleizer, G., Eibscutz, E., Neumann, D. A. and Rhyne, J. J., Phys. Rev. B 39, 11587 (1989).Google Scholar
2. Tarascon, J. M., Ramesh, R., Barboux, P., Hedge, M. S., Hull, G. W., Greene, L. H., Giroud, M., LePage, Y., McKinnon, W. R., Waszczak, J. V., and Schneemeyer, L. F., Solid State Commun. 71, 663 (1989).Google Scholar
3. Tsukada, I., Terasaki, I., Hoshi, T., Yura, F. and Uchinokura, K., J. Appl. Phys. 76, 1317 (1994).Google Scholar
4. Tsukada, I., Nose, M. and Uchinokura, K., J. Appl. Phys. 80, 5691 (1996).Google Scholar
5. Nose, M., Tsukada, I. and Uchinokura, K., Czech. J. Phys. 46, 1323 (1996).Google Scholar
6. Yamaguchi, S., Taniguchi, H., Takagi, H., Arima, T. and Tokura, Y., J. Phys. Soc. Jpn. 64, 1885 (1995).Google Scholar
7. Mahendiran, R. and Raychaudhuri, A. K., Phys. Rev. B 54, 16044 (1996).Google Scholar
8. Heikes, R. P., Miller, R. C., and Mazelsky, R., Physica 30, 1600 (1964).Google Scholar
9. Raccah, P. M. and Goodenough, J. B., J. Appl. Phys. 39, 1209 (1968).Google Scholar
10. Itoh, M., Natori, I., Kubota, S. and Motoya, K., J. Phys. Soc. Jpn. 63, 1486 (1994).Google Scholar
11. Korotin, M. A., Ezhov, S. Y., Solovyev, I. V., Anisimov, V. I., Khomskii, D. I. and Sawatzky, G. A., Phys. Rev. B 54, 5309 (1996).Google Scholar
12. Yamaguchi, S., Okimoto, Y. and Tokura, Y., Phys. Rev. B 55, R8666 (1997).Google Scholar
13. Asai, K., Yokokura, O., Nishimori, N., Chou, H., Tranquada, J. M., Shirane, G., Higuchi, S., Objima, Y. and Kohn, K., Phys. Rev. B 50, 3025 (1994).Google Scholar
14. Yamaguchi, S., Okimoto, Y., Taniguchi, H. and Tokura, Y., Phys. Rev. B 53, R2926 (1996).Google Scholar
15. Furukawa, N., J. Phys. Soc. Jpn. 63, 3214 (1994).Google Scholar