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Effect of Annealing on Microstructure and Properties of Al-Ti Multilayered Films

Published online by Cambridge University Press:  10 February 2011

R. Mitra
Affiliation:
Department of Materials Science and Engineering, Northwestern University, Evanston, IL 60208
A. Madan
Affiliation:
Advanced Coating Technology Group, Northwestern University, Evanston, IL 60208
R. A. Hoffman
Affiliation:
Advanced Coating Technology Group, Northwestern University, Evanston, IL 60208
W. A. Chiou
Affiliation:
Department of Materials Science and Engineering, Northwestern University, Evanston, IL 60208
J. R. Weertman
Affiliation:
Department of Materials Science and Engineering, Northwestern University, Evanston, IL 60208
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Abstract

Al-Ti multilayered films were deposited by magnetron sputtering of Al and Ti targets on to Si (100) or NaCl substrates. The bi-layer thickness was 16 nm with Ti constituting 12% of the total thickness. The films were subsequently annealed in vacuum at 400°C for periods between 2 and 24 h. In the course of the annealing, interdiffusion and chemical reaction between Al and Ti layers led to the precipitation of Al3Ti particles. Plan view and cross-section TEM examination of as-deposited and annealed films were performed to study the microstructural evolution, and to estimate the Al grain and AI3Ti particle size distributions. Cross-section TEM and X-ray diffraction showed a well-defined layered structure in the as-deposited films. The microstructure was found to be metastable in the first 6 h of annealing, with Al-Ti multilayers being gradually replaced by an AI-AI3Ti composite structure. The Al3Ti particles were uniformly distributed throughout the film. X-ray and electron diffraction analyses showed that Al3Ti possessed the ordered DO22 structure. The hardness of the Al-Ti films in as-deposited and annealed conditions was determined using a nanoindenter and the data have been correlated with the microstructural changes with annealing.

Type
Research Article
Copyright
Copyright © Materials Research Society 2000

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