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Depletion Fraction of Silane and Dominant Neutral Radical in RF Glow Discharge in Silane

Published online by Cambridge University Press:  01 January 1993

Quixun Lin ,
Xuanying Lin ,
Zeng Xu ,
Yunpen Yu  and
Shaoqi Peng
Quixun Lin
Affiliation:
Department of Physics, Shantou University, Guangdong, China 515063E-mail:xylin@stumis%hkucnt.hku.hk
Xuanying Lin
Affiliation:
Department of Physics, Shantou University, Guangdong, China 515063E-mail:xylin@stumis%hkucnt.hku.hk
Zeng Xu
Affiliation:
Department of Physics, Shantou University, Guangdong, China 515063E-mail:xylin@stumis%hkucnt.hku.hk
Yunpen Yu
Affiliation:
Department of Physics, Shantou University, Guangdong, China 515063E-mail:xylin@stumis%hkucnt.hku.hk
Shaoqi Peng
Affiliation:
Department of Physics, Zhongshan University, Guangdong, China 510275
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Abstract

A quadripole mass spectrometer was installed on the line of a PCVD system to measure the depletion fraction of silane and the monosilicon radicals in the discharges. The paper presents a method of measuring the depletion fraction of silane when setting the mass spectrometer at the high ionization voltage. The experimental results were compared and accordant with those reported before [1,2,3].

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 297: Symposium A – Amorphous Silicon Technology - 1993 , 1993 , 37
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

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