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Real-Time Analysis Of In-Situ Spectroscopic Ellipsometric Data During Mbe Growth Of III-V Semiconductors

Published online by Cambridge University Press:  16 February 2011

B. Johs ,
J. L. Edwards ,
K. T. Shiralagi ,
R. Droopad ,
K. Y. Choi ,
G. N. Maracas ,
D. Meyer ,
G. T. Cooney  and
John A. Woollam
B. Johs
Affiliation:
J.A. Woollam Co., 650 ‘J’ St. Suite 39, Lincoln, NE, 68508. Research supported by DARPA contract DAAHO1-89-C-0357
J. L. Edwards
Affiliation:
Center for Solid State Electronics Research, Arizona State University, Tempe, AZ 85287. Research supported by DARPA contract DAAHO1-89-C-0357
K. T. Shiralagi
Affiliation:
Center for Solid State Electronics Research, Arizona State University, Tempe, AZ 85287. Research supported by DARPA contract DAAHO1-89-C-0357
R. Droopad
Affiliation:
Center for Solid State Electronics Research, Arizona State University, Tempe, AZ 85287. Research supported by DARPA contract DAAHO1-89-C-0357
K. Y. Choi
Affiliation:
Center for Solid State Electronics Research, Arizona State University, Tempe, AZ 85287. Research supported by DARPA contract DAAHO1-89-C-0357
G. N. Maracas
Affiliation:
Center for Solid State Electronics Research, Arizona State University, Tempe, AZ 85287. Research supported by DARPA contract DAAHO1-89-C-0357
D. Meyer
Affiliation:
J.A. Woollam Co., 650 ‘J’ St. Suite 39, Lincoln, NE, 68508. Research supported by DARPA contract DAAHO1-89-C-0357
G. T. Cooney
Affiliation:
J.A. Woollam Co., 650 ‘J’ St. Suite 39, Lincoln, NE, 68508. Research supported by DARPA contract DAAHO1-89-C-0357
John A. Woollam
Affiliation:
J.A. Woollam Co., 650 ‘J’ St. Suite 39, Lincoln, NE, 68508. Research supported by DARPA contract DAAHO1-89-C-0357
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Abstract

A modular spectroscopic ellipsometer, capable of both in-situ and ex-situ operation, has been used to measure important growth parameters of GaAs/AIGaAs structures. The ex-situ measurements provided layer thicknesses and compositions of the grown structures. In-situ ellipsometric measurements allowed the determination of growth rates, layer thicknesses, and high temperature optical constants. By performing a regression analysis of the in-situ data in real-time, the thickness and composition of an AIGaAs layer were extracted during the MBE growth of the structure.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 222: Symposium D – Atomic Layer Growth and Processing , 1991 , 75
Copyright
Copyright © Materials Research Society 1991

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References

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