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An Optimized 300mm BCB Wafer Bonding Process for 3D Integration

Published online by Cambridge University Press:  01 February 2011

Pratibha Singh ,
John Hudnall ,
Jamal Qureshi ,
Vimal Kumar Kamineni ,
Chris Taylor ,
Andy Rudack ,
Alain Diebold  and
Sitaram Arkalgud
Pratibha Singh
Affiliation:
pratibha.singh@sematech.org, GLOBALFOUNDRIES Inc., Albany, New York, United States
John Hudnall
Affiliation:
John.Hudnall@sematech.org, SEMATECH, Albany, New York, United States
Jamal Qureshi
Affiliation:
Jamal.Qureshi@sematech.org, SEMATECH, Albany, New York, United States
Vimal Kumar Kamineni
Affiliation:
VKamineni@uamail.albany.edu, CNSE, SUNY, Albany, New York, United States
Chris Taylor
Affiliation:
Chris.Taylor@sematech.org, SEMATECH, Albany, New York, United States
Andy Rudack
Affiliation:
Andy.Rudack@sematech.org, SEMATECH, Albany, New York, United States
Alain Diebold
Affiliation:
ADiebold@uamail.albany.edu, CNSE, SUNY, Albany, New York, United States
Sitaram Arkalgud
Affiliation:
Sitaram.Arkalgud@SEMaTECH.Org, SEMATECH, Albany, New York, United States
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Abstract

Wafer bonding using benzocyclobutene (BCB) has been discussed in the past for three-dimensional (3D) integration. This paper reports the development and characterization of a manufacturable BCB bonding process for 300 mm wafers using standard 300 mm tools. A systematic optimization approach has been developed to characterize the bulk properties of the BCB film that can be applied to various integration schemes. We specifically discuss one such application—handle wafer bonding. BCB bonding for a range of cross-linking levels has been investigated. The cross-linking level of BCB before bonding is determined using an infrared (IR) variable angle spectroscopic ellipsometer (VASE) technique. The impact of the BCB film preparation and bonding condition on bond quality is characterized using scanning acoustic microscopy (SAM) , IR microscopy, a razor blade test, and four-point bend methods. Based on the results, an optimum cross-linking level for BCB film before bonding was determined for 300 mm wafers to obtain void-free and dendrite-free bonds. Wafers bonded using the optimized BCB process conditions have successfully sustained backgrinding, dry thinning, and standard BEOL metallization steps.

Keywords

adhesionbondinginfrared (IR) spectroscopy
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1249: Symposia E/F – Advanced Interconnects and Chemical Mechanical Planarization for Micro-and Nanoelectronics , 2010 , 1249-F09-06
Copyright
Copyright © Materials Research Society 2010

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