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Copper-sulfide Passivation Capping for Cu Interconnects

Published online by Cambridge University Press:  01 February 2011

Uri Cohen
Uri Cohen*
Affiliation:
uricohen111@yahoo.com
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Abstract

Copper-sulfide is proposed as a selective self-aligned passivation capping film on Cu lines, to improve the lines immunity against electromigration. Copper-sulfide is tenacious, having excellent adhesion (chemically bonded) to the underlying copper lines and strong adhesion to the overlying dielectric capping barrier. Contrary to other passivation schemes, Cu sulfidation is 100% selective. The sulfidation can be done by a wet or a dry process. A very thin copper-sulfide film (of about 25-100Å) will be required, and no significant increase of RC delay is expected.

Keywords

electromigrationCupassivation
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1249: Symposia E/F – Advanced Interconnects and Chemical Mechanical Planarization for Micro-and Nanoelectronics , 2010 , 1249-F04-03
Copyright
Copyright © Materials Research Society 2010

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References

[1] Cohen, U., U.S. Pat. No. 7,573,133; and U.S. Pat. No. 7,709,958.Google Scholar
[2] Cohen, U., Provisional Pat. Applications 60/528,561 (filed on 02/09/2003); 60/581,285 (filed on 06/18/2004); and 60/686,133 (filed on 05/31/2005).Google Scholar
[3] Shacham-Diamand, Y., Sverdlov, Y., and Petrov, N., J. Electrochem. Soc., Vol. 148, pp. C162–C167 (2001).Google Scholar
[4] Mathew, V. et al. , “Electroless Plated CoWB and CoWPB Films for Copper Cap Applications”, ECS Meeting, May 2005.Google Scholar
[5] Singer, Peter, “Copper Challenges for the 45 nm Node”, Semiconductor International, 5/1/2005.Google Scholar
[6] Lee, Bill, “Electroless CoWP Boosts Copper Reliability, Device Performance”, Semiconductor International, 7/1/2004.Google Scholar
[7] Singer, Peter, “The Advantages of Capping Copper With Cobalt”, Semiconductor International, 10/1/2005.Google Scholar
[8] Narasimhan, Murali, “Taking Control of the Copper Process at 65 nm”, Future Fab Intl., Vol. 16, 2/3/2004.Google Scholar
[9] Alers, G. B., “45nm Reliability Issues”, Novellus System's website link: http://www.novellus.com/NR/rdonlyres/E2C79565-D703-4C08-9A02-D744FAA94A02/0/050605_45nm_reliability_issues.pdfGoogle Scholar
[10] Gosset, L. G. et al. , Proceeding of 2003 AMC Conference, pp. 321–327 (2004).Google Scholar
[11] Dumont-Girard, P. et al. , 2005 International Interconnect Technology Conference (IITC), pp. 132–134, June 2005.Google Scholar