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Simultaneous TEM and Cathodoluminescence Imaging of Non Uniformity in In0.1Ga0.9N Quantum Wells

Published online by Cambridge University Press:  11 February 2011

Nicholas M. Boyall ,
Ken Durose  and
Ian M. Watson
Nicholas M. Boyall
Affiliation:
Department of Physics, University of Durham, South Road, Durham, DH1 3LE, UK.
Ken Durose
Affiliation:
Department of Physics, University of Durham, South Road, Durham, DH1 3LE, UK.
Ian M. Watson
Affiliation:
Institute of Photonics, University of Strathclyde, Wolfson Centre, 106 Rottenrow, Glasgow, G4 ONW, UK.
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Abstract

Monochromatic cathodoluminescence (CL) imaging of metal-organic vapour phase epitaxy (MOVPE) grown In0.1Ga0.9N single quantum wells (QW) has been performed in a scanning transmission electron microscope (STEM). Spatially resolved fluctuations in the CL emission wavelength and intensity of the QW luminescence were recorded. The presence of regions with luminescent features asymmetrically distributed either side of the QW peak emission was inferred. These fluctuations may be attributed to, by for example, variations of ±0.01 in the In fraction of the In0.1Ga0.9N alloy, to changes of up to 0.6nm in the QW thickness. However these factors do not explain the gross fluctuations in QW emission intensity observed in TEM-CL on the scale of ∼1μm.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 743: Symposium L – GaN and Related Alloys , 2002 , L11.12
Copyright
Copyright © Materials Research Society 2003

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