Hostname: page-component-76fb5796d-qxdb6 Total loading time: 0 Render date: 2024-04-26T00:42:15.359Z Has data issue: false hasContentIssue false
  • English
  • Français

Unusual Surface Undulations Observed in Ge/Si(100) Multilayers

Published online by Cambridge University Press:  17 March 2011

Woei Wu Pai ,
Y. H. Peng ,
W. F. Chung ,
S. Y. Wang ,
K. N. Chen  and
H. H. Cheng
Woei Wu Pai
Affiliation:
Center for Condensed Matter Sciences, National Taiwan University Taipei, Taiwan106
Y. H. Peng
Affiliation:
Center for Condensed Matter Sciences, National Taiwan University Taipei, Taiwan106
W. F. Chung
Affiliation:
Center for Condensed Matter Sciences, National Taiwan University Taipei, Taiwan106
S. Y. Wang
Affiliation:
Center for Condensed Matter Sciences, National Taiwan University Taipei, Taiwan106
K. N. Chen
Affiliation:
Center for Condensed Matter Sciences, National Taiwan University Taipei, Taiwan106
H. H. Cheng
Affiliation:
Center for Condensed Matter Sciences, National Taiwan University Taipei, Taiwan106
Get access

Abstract

Multilayer Ge/Si quantum wells grown on Si(100) at lower temperatures (300 C for Ge and 435 C for Si) exhibit unexpected large surface undulations. These groove-like features along <110> directions are correlated to the underlying dislocation networks. Studies on the dependence of surface roughness versus Ge spacer thickness exclude kinetic limitation as the cause of the observed troughs. Further comparison of the surfaces for multilayer and single-layer samples indicates a combination of the multilayer structure and the inhomogeneous surface strain field greatly enhances the undulations.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 648: Symposium P – Growth, Evolution & Properties of Surfaces, Thin Films, and Self Organized Structure , 2000 , P10.7
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Paul, D. J., Advanced Material 11, 191 (1999) and references therein.Google Scholar
2. Asaro, R. J., and Tiller, W. A., Metall. Trans. 3,1789 (1972).Google Scholar
3. Grinfeld, M. A., Sov. Phys. Dokl. 31, 831 (1986).Google Scholar
4. Ozkan, C. S., Nix, W. D., and Gao, H. J., Appl. Phys. Lett. 70, 2247 (1997).Google Scholar
5. Gao, H., Ozkan, C. S., Nix, W. D., Zimmerman, J. A., and Freund, L. B., Phil. Mag. A 79, 349 (1999).Google Scholar
6. Dorsch, W., Steiner, B., Albrecht, M., Strunk, H. P., Wawra, H., and Wagner, G., J. Crys. Growth 183, 305 (1998).Google Scholar
7. Sutter, P., and Lagally, M. G., Phys. Rev. Lett. 84, 4637 (2000); R. M. Tromp, F. M. Ross, and M. C. Reuter, Phys. Rev. Lett. 84, 4641(2000).Google Scholar
8. Eaglesham, D. J., and Cerullo, M., Phys. Rev. Lett. 64, 1943(1990).Google Scholar
9. Cullis, A.G., Pidduck, A. J., and Emeny, M. T., Phys. Rev. Lett. 75, 2368 (1995).Google Scholar
10. Jesson, D. E., Chen, K. M., Pennycook, S. J., Thundat, T., and Warmack, R. J., Science 268, 1161 (1995).Google Scholar
11. Tersoff, J., and LeGoues, F. K., Phys. Rev. Lett. 72, 3570 (1994).Google Scholar
12. Yang, W. H., and Srolovitz, D. J., Phys. Rev. Lett. 71, 1593 (1993).Google Scholar
13. Hsu, J. W. P., Fitzgerald, E. A., Xie, Y.-H., Silverman, P. J., and Cardillo, M. J., Appl. Phys. Lett. 61, 1293 (1993).Google Scholar
14. Albrecht, M., Chrisiansen, S., Michler, J., Dorsch, W., and Strunk, H. P., Hansson, P. O., and Bauser, E., Appl. Phys. Lett. 67, 1232 (1995).Google Scholar
15. Shiryaev, S. Yu., Jensen, F., Hansen, J. L., Petersen, J. W., and Larsen, A. N., Phys. Rev. Lett. 78, 503 (1997).Google Scholar
16. Lutz, M. A., Feenstra, R. M., LeGoues, F. J., Mooney, P. M., and Chu, J. O., Appl. Phys. Lett. 66, 724 (1995).Google Scholar
17. Spencer, B. J., Voorhees, P. W., and Tersoff, J., Phys. Rev. Lett. 84, 2449 (2000).Google Scholar
18. Strunk, H. P., Christiansen, S., and Albrecht, M., Mat. Res. Soc. Symp. Proc. 399, 313 (1996).Google Scholar
19. Ozkan, C. S., Nix, W. D., and Gao, H. J., Mat. Res. Soc. Symp. Proc. 436, 487 (1997).Google Scholar
20. Mo, Y. W., Savage, D. E., Swartzentruber, B. S., and Lagally, M. G., Phys. Rev. Lett. 65, 1020 (1990).Google Scholar
21. Medeiros-Ribeiro, G., Bratkovski, A. M., Kamins, T. I., Ohlberg, D. A. A., Williams, R. S., Science 279, 353 (1998).Google Scholar
22. Cheng, H. H., and Pai, W. W., in preparation.Google Scholar