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Study of SiF4-N2-H2 Plasmas for the Deposition of Fluorinated Silicon Nitride Films

Published online by Cambridge University Press:  22 February 2011

G. Cicala ,
G. Bruno ,
P. Capezzuto  and
M. Losurdo
G. Cicala
Affiliation:
Centro di Studio per la Chimica dei plasmi, C.N.R., Dipartimento di Chimica-Université di Bari, Via G. Amendola 173, 70126 Bari, Italy.
G. Bruno
Affiliation:
Centro di Studio per la Chimica dei plasmi, C.N.R., Dipartimento di Chimica-Université di Bari, Via G. Amendola 173, 70126 Bari, Italy.
P. Capezzuto
Affiliation:
Centro di Studio per la Chimica dei plasmi, C.N.R., Dipartimento di Chimica-Université di Bari, Via G. Amendola 173, 70126 Bari, Italy.
M. Losurdo
Affiliation:
Centro di Studio per la Chimica dei plasmi, C.N.R., Dipartimento di Chimica-Université di Bari, Via G. Amendola 173, 70126 Bari, Italy.
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Abstract

Radiofrequency glow discharges, operating under various conditions, have been used to deposit hydrogenated and fluorinated silicon nitride (a-Si,N:H,F) from SiF4-N2-H2 gas mixtures. The effect of the feeding mixture composition has been investigated in order to establish the optimum deposition conditions for stable silicon nitride. High H2-dilution of the feeding mixture has been found to produce transparent (Eg>5.6eV) and stoichiometric (N/Si=1.3) films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 284: Symposium G – Amorphous Insulating Thin Films , 1992 , 27
Copyright
Copyright © Materials Research Society 1993

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References

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