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Structures of Bonding Interface by Forming Hydrogen Bridges

Published online by Cambridge University Press:  15 February 2011

M. Nagakubo
Affiliation:
Research Laboratories, Nippondenso Co., Ltd., 500-1, Minamiyama, Komenoki, Nisshin, Aichi 470-01, JAPAN
H. Suzuki
Affiliation:
Research Laboratories, Nippondenso Co., Ltd., 500-1, Minamiyama, Komenoki, Nisshin, Aichi 470-01, JAPAN
T. Idogaki
Affiliation:
Research Laboratories, Nippondenso Co., Ltd., 500-1, Minamiyama, Komenoki, Nisshin, Aichi 470-01, JAPAN
T. Hattori
Affiliation:
Research Laboratories, Nippondenso Co., Ltd., 500-1, Minamiyama, Komenoki, Nisshin, Aichi 470-01, JAPAN
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Abstract

Direct bonding by forming interface hydrogen bridges has been investigated for both combinations of AI.Si and Al.PZT{Pb(Zr,Ti)03). Hydrogen bridges are formed between OH-groups and oxygen atoms on each bonding surface. Therefore, the surface adsorbing of OH-groups (hydrophilic treatment) is required to the pre-treatment of bonding surface. In this study, two ways of conventional hydrophilic treatment by wet-process and novel treatment by the surface bombardment of hydro-ions(H2O+, OH+, O+, and others) in vacuum (dry-process) have been examined.

Each bonding surface is contacted in the air after the hydrophilic treatment. In the case of hydrophilic treatment by wet-process, the bonding strength of Al-Si shows about 20 MPa after the heat treatment of above 350°C. As for the dry-process, both combinations of At.Si and AI.PZT are bondable, and their strength shows the similar tendency as wet-process with the time and the temperature of heat treatment. However, the bonding area increases more quickly than the ones of wet process. From the results of SIMS and cross-sectional TEM observation of AlSi bonding interface, it is suggested that these bonding are caused by the hydrogen bond formation without interfacial water molecules.

Type
Research Article
Copyright
Copyright © Materials Research Society 1995

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