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The Photoemission from Superlattices of III-V Semiconductors with Graded Interfaces Under Quantizing Magnetic Field

Published online by Cambridge University Press:  15 February 2011

Kamakhya P. Ghatak  and
Badal De
Kamakhya P. Ghatak
Affiliation:
Department of Electronics & Tele-communication Engineering, Faculty of Engineering and Technology, Jadavpur University, Calcutta - 700032, India.
Badal De
Affiliation:
96 Azalea Street, Paramus, NJ 07652, USA.
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Abstract

In this paper we have studied the photoemission from super-lattices of III-V semiconductors under magnetic quantization by formulating a new dispersion law. It is found, taking InAs/GaSb super-lattice with graded interfaces as an example that the photoemission, increases with increasing electron concentration in an oscillatory way and increases with decreasing magnetic field in the magnetic quantum limit. Besides, the photoemission in superlattices is much greater than that of the constituent materials and the well-known results for wide-gap materials have also been obtained from our generalized analysis. In addition, the theoretical analysis is in agreement with the experimental datas as given elsewhere.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 299: Symposium C2 – Infrared Detectors--Materials, Processing, and Devices , 1994 , 65
Copyright
Copyright © Materials Research Society 1994

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References

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