Crossref Citations
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Soref, R.A.
1993.
Silicon-based optoelectronics.
Proceedings of the IEEE,
Vol. 81,
Issue. 12,
p.
1687.
Published online by Cambridge University Press: 25 February 2011
A new, fast, intrasubband 1.55 μm electrooptic modulator in the SiGe/Si/CaF2-on-Si steppedquantum- well system is proposed and analyzed. At electric fields of ±8 V/μm, resonant 1-3 conduction intrasubband absorption is predicted to give 18 dB of optical extinction for narrow-linewidth transitions. We expect this field effect modulator to have microwave response, plus compatibility with Si-based optoelectronic integration.