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Investigation of Blistering Phenomena in Hydrogen-Implanted GaN and AlN for Thin Film Layer Transfer Applications

Published online by Cambridge University Press:  01 February 2011

Rajendra Singh ,
R. Scholz ,
S. H. Christiansen  and
U. Goesele
Rajendra Singh
Affiliation:
rsingh@physics.iitd.ac.in, Indian Institute of Technolgy Delhi, Physics, Hauz Khas, New delhi, 110016, India, 0091 11 2659 6495
R. Scholz
Affiliation:
roscholz@mpi-halle.de, Max Planck Institute of Microstructure Physics, Experimental II, Weinberg 2, Halle, 06120, Germany
S. H. Christiansen
Affiliation:
christiansen@mpia-halle.de, Max Planck Institute of Microstructure Physics, Experimental II, Weinberg 2, Halle, 06120, Germany
U. Goesele
Affiliation:
goesele@mpi-halle.de, Max Planck Institute of Microstructure Physics, Experimental II, Weinberg 2, Halle, 06120, Germany
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Abstract

High dose hydrogen implantation-induced blistering phenomena in GaN and AlN have been investigated for potential thin film layer transfer applications. GaN and AlN were implanted with 100 keV H2+ ions with various ion doses in the range of 5´1016 to 2.5´1017 cm−2. After implantation the samples were annealed at higher temperatures up to 800°C in order to observe the formation of surface blisters. In the case of GaN only those samples that were implanted with a dose of 1.3´1017 cm−2 or higher showed surface blistering after post-implantation annealing. For AlN the samples those were implanted with a dose of 1.0´1017 or 1.5´1017 cm−2 displayed surface blistering after post-implantation annealing. Cross-sectional transmission electron microscopy was utilized to observe the microscopic defects that eventually cause surface blistering. Large area microcracks, as revealed in the XTEM images, were clearly observed in the case of both GaN and AlN after post-implantation annealing. A comparison of the hydrogen implantation-induced blistering in GaN and AlN has also been presented.

Keywords

III-Vannealingtransmission electron microscopy (TEM)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1068: Symposium C – Advances in GaN, GaAs, SiC and Related Alloys on Silicon Substrates , 2008 , 1068-C01-08
Copyright
Copyright © Materials Research Society 2008

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References

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