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Study of SiO2 Formation by Plasma Treatment of SiO Thin Films

Published online by Cambridge University Press:  22 February 2011

J. Perriere ,
B. Pelloie ,
F. Rochet ,
E. Fogarassy ,
A. Slaoui ,
G. Dufour ,
H. Roulet  and
M. Fromnt
J. Perriere
Affiliation:
Group de Physique des Solides del E.N.S., UniversitéParisVII, Tour23, 2, Place Jussie, 75251 Paris Cedex 05,France
B. Pelloie
Affiliation:
Group de Physique des Solides del E.N.S., UniversitéParisVII, Tour23, 2, Place Jussie, 75251 Paris Cedex 05,France
F. Rochet
Affiliation:
Group de Physique des Solides del E.N.S., UniversitéParisVII, Tour23, 2, Place Jussie, 75251 Paris Cedex 05,France
E. Fogarassy
Affiliation:
Centre de Recherches Nucléaires, Laboratoire PHASE, 23 Rue du Loess, 67037 Strasbourg Cedex, France
A. Slaoui
Affiliation:
Centre de Recherches Nucléaires, Laboratoire PHASE, 23 Rue du Loess, 67037 Strasbourg Cedex, France
G. Dufour
Affiliation:
Laboratorie de Chimie Physique, Université Pierreet Marie Curie, 11, rue Pierre et Marie Curie, 75231 Paries Cedex 05, France
H. Roulet
Affiliation:
Laboratorie de Chimie Physique, Université Pierreet Marie Curie, 11, rue Pierre et Marie Curie, 75231 Paries Cedex 05, France
M. Fromnt
Affiliation:
Physique des Liquides et Electrochimie, Université Pierre et Marie Curie, Tour 22, 4, Place Jussieu, 75230 Paris Cedex 05, France
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Abstract

Our Present Understanding of the Mechanisms of the transformation of SiO films under treatments in O2 or Ar plasma at room T, is presented. RBS, IR absorption, XPS, RHEED and TEM techniques have been used to investigate the composition, the chemical and structural nature of the films after oxidizing or non oxidizing treatments. In O2 plasma, SiO is converted into Si02 by room T plasma anodization. The initial step of SiO oxidation, which is believed to be the transformation 2SiO→Si+SiO2, was studied in Ar plasma. We show that the as deposited SiO (not a mixture of Si and SiO2) is subject to disproportionate into the later compounds and that the effects of irradiation by low energy electrons at room T (plasma treatment) are similar to those observed for high T treatments (rapid thermal annealing).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 105: Symposium F – SiO2 and Its Interfaces , 1987 , 85
Copyright
Copyright © Materials Research Society 1988

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References

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