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Carbon Nanotube-Based Vacuum Microelectronic Gated Cathode

Published online by Cambridge University Press:  10 February 2011

Xueping Xu  and
George R. Brandes
Xueping Xu
Affiliation:
Advanced Technology Materials, Inc., 7 Commerce Drive, Danbury, CT 06810-4169, Email:, xxu@atmi.com
George R. Brandes
Affiliation:
Advanced Technology Materials, Inc., 7 Commerce Drive, Danbury, CT 06810-4169
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Abstract

A vacuum microelectronic device containing carbon nanotube electron field-emitters was developed and tested. The gated cathode was fabricated using conventional microelectronics fabrication techniques and a final, self-aligned, in situ carbon nanotube growth step. To our knowledge, this is the first vacuum microelectronics device with carbon nanotube field-emitters grown in situ with a catalytic growth process. The turn-on voltage of the cathode was less than 20 volts and the emission current density at 50 volts was as high as 9 mA-cm−2. The fabrication process, device performance, manufacturing issues and cathode applications will be discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 509: Symposium C – Materials Issues in Vacuum Microelectronics , 1998 , 107
Copyright
Copyright © Materials Research Society 1998

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