Hostname: page-component-76fb5796d-5g6vh Total loading time: 0 Render date: 2024-04-26T13:37:06.268Z Has data issue: false hasContentIssue false

System Design Considerations for Optimizing the Benefit by Unipolar SiC Power Devices.

Published online by Cambridge University Press:  11 February 2011

Roland Rupp
Affiliation:
Infineon Technologies AG, Power Management & Supply, Balanstrasse 73, D-81609 Munich, Germany
Ilia Zverev
Affiliation:
Infineon Technologies AG, Power Management & Supply, Balanstrasse 73, D-81609 Munich, Germany
Get access

Abstract

Focussing on unipolar SiC power devices a variety of applications are described, where cost reduction can be a achieved on system level even for SiC device costs being several times higher than the costs of the competing Si devices. Based on the specific properties of SiC devices like Schottky diodes and JFETs it is explained with the help of these examples how this is attainable.

Type
Research Article
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] see http://www.ecn.purdue.edu/WBG/Data_Bank/Best_Performance.htmlGoogle Scholar
[2] Stephani, D., Proc. of the PCIM Conference 2002 NürnbergGoogle Scholar
[5] Lorenz, L., Deboy, G., Knapp, A., Maerz, M., Proc. ISPSD'99, pp.310, 1999 Google Scholar
[6] Peters, D., Friedrichs, P., Schörner, R., Stephani, D.; Mat. Sci. For. 389–393 (2002) pp. 11251128 Google Scholar
[7] Dahlquist, F., Lendenmann, H., Östling, M.; Mat. Sci. For. 389–393 (2002) pp. 11291132 Google Scholar
[8] Treu, M., Rupp, R., Kapels, H., Bartsch, W.; Mat. Sci. For 353–356 (2001) pp 679682 Google Scholar
[9] Infineon datasheet SDP06S60 www.infineon.com/cgi/ecrm.dll/ecrm/scripts/public_download.jsp?oid=27312&parent_oid=22168Google Scholar
[10] Morisette, D.T., Cooper, J.A. Jr Mat. Sci. For. Vols. 389–393 (2002) pp 11571160.Google Scholar
[11] Schörner, R., Friedrichs, P., Peters, D., Mitlehner, H.,, Weis, B., Stephani, D., Mat. Sci. For. Vol. 338–342 (2000), pp 1295–1298Google Scholar
[12] Chung, G.Y.; Tin, C.C.; Williams, J.R.; McDonald, K.; Chanana, R.K.; Weller, R.A.; Pantelides, S.T.; Feldman, L.C.; Holland, O.W.; Das, M.K.; Palmour, J.W.,”IEEE Electron Device Letters, Vol. 22 (2001) No. 4, p.176,Google Scholar
[13] Mitlehner, H., Bartsch, W., Dohnke, K.O., Friedrichs, P., Kaltschmidt, R., Weinert, U., Weis, B., Stephani, D.; Proc. of the ISPSD 1999 Toronto (1999) pp.339342 Google Scholar
[14] Mitlehner, H., Friedrichs, P., Dohnke, K.O., Schörner, R., Elpelt, R., Stephani, D.; Proc. of the PCIM Conference 2002 NürnbergGoogle Scholar
[15] Friedrichs, P., Mitlehner, H., Schoerner, R., Dohnke, K.-O., Elpelt, R., Stephani, D., Mat. Sci. For. 389–393 (2002) pp. 11851190 Google Scholar
[16] Infineon datasheet SPD25N06S2–40; www.infineon.com/cgi/ecrm.dll/ecrm/scripts/public_download.jsp?oid=27654Google Scholar
[17] Kapels, H., Rupp, R., Lorenz, L., Zverev, I.; Proc. of the PCIM Conference (2001) NürnbergGoogle Scholar
[18] Zverev, I., Kapels, H., Rupp, R., Herfurth, M.; Proc. of the PCIM Conference (2002) Nürnberg Google Scholar
[19] Laska, T., Muenzer, M., Pfirsch, F.; Schaeffer, C., Schmidt, T.; Proc. ISPSD′2000 (Toulouse) p. 355 Google Scholar
[21] Zverev, I., Rupp, R.; applied for publication at the APEC Conference 2003 Google Scholar
[22] PDF-Based Power Applications Library, Artesyn Technologies, www.artesyn.com, 2002 Google Scholar
[23] Ovren, C., Lendenmann, H., Linder, S., Bijlenga, B. “Electronics with power” Focus on Transmission and Distribution, ABB review 2000 Google Scholar