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Heterovalent ZnTe/GaSb and ZnSe/GaAs Grown by Molecular Beam Epitaxy

Published online by Cambridge University Press:  04 August 2017

Brian D. Tracy ,
David J. Smith ,
Maxwell Lassise  and
Yong-Hang Zhang
Brian D. Tracy
Affiliation:
Department of Physics, Arizona State University, Tempe, AZ.
David J. Smith
Affiliation:
Department of Physics, Arizona State University, Tempe, AZ.
Maxwell Lassise
Affiliation:
School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, AZ.
Yong-Hang Zhang
Affiliation:
School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, AZ.

Abstract

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Abstract
Information
Microscopy and Microanalysis , Volume 23 , Supplement S1: Proceedings of Microscopy & Microanalysis 2017 , July 2017 , pp. 1472 - 1473
Copyright
© Microscopy Society of America 2017 

References

[1] Alferov, Z.I. Semiconductors 32 1998). p. 1.CrossRefGoogle Scholar
[2] Halsall, M.P., et al, Appl. Phys. Lett. 60 1992). p. 2129.CrossRefGoogle Scholar
[3] The authors acknowledge support from AFOSR and the use of facilities within the John M. Cowley Center for High Resolution Electron Microscopy at Arizona State University.Google Scholar