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A Dynamic Model of III-V Ternary Semiconductor Alloys in the Epitaxial Growth

Published online by Cambridge University Press:  22 February 2011

Bing-Lin Gu ,
Jing-Zhi Yu ,
Xiao Hu ,
Kaoru Ohno  and
Yoshiyuki Kawazoe
Bing-Lin Gu
Affiliation:
On leave from Department of Physics, Tsinghua University, Beijing, 100084, China
Jing-Zhi Yu
Affiliation:
Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980, Japan
Xiao Hu
Affiliation:
Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980, Japan
Kaoru Ohno
Affiliation:
Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980, Japan
Yoshiyuki Kawazoe
Affiliation:
Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980, Japan
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Abstract

A concentration wave method for several interpenetrating Bravais sublattices is presented by considering the intralayer and interlayer effective interactions and the difference between the surface layers and the deeper layers in III – V alloys. The ground state ordered structures of ternary III – V semiconductor alloys are deduced and a dynamic model is established.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 340: Symposium E – Compound Semiconductor Epitaxy , 1994 , 111
Copyright
Copyright © Materials Research Society 1994

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References

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