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Hydrogen Incorporation in A-Si:H: Temperature and Doping Type Dependence

Published online by Cambridge University Press:  25 February 2011

M.J.M. Pruppers ,
K.M.H. Maessen ,
F.H.P.M. Habraken ,
J. Bezemer  and
W.F. Van Der Weg
M.J.M. Pruppers
Affiliation:
Department of Atomic and Interface Physics, University of Utrecht, P.O. Box 80.000 NL-3508 TA Utrecht, The Netherlands
K.M.H. Maessen
Affiliation:
Department of Atomic and Interface Physics, University of Utrecht, P.O. Box 80.000 NL-3508 TA Utrecht, The Netherlands
F.H.P.M. Habraken
Affiliation:
Department of Atomic and Interface Physics, University of Utrecht, P.O. Box 80.000 NL-3508 TA Utrecht, The Netherlands
J. Bezemer
Affiliation:
Department of Atomic and Interface Physics, University of Utrecht, P.O. Box 80.000 NL-3508 TA Utrecht, The Netherlands
W.F. Van Der Weg
Affiliation:
Department of Atomic and Interface Physics, University of Utrecht, P.O. Box 80.000 NL-3508 TA Utrecht, The Netherlands
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Abstract

Phosphorus, boron and compensation doped hydrogenated amorphous silicon films were deposited in a glow discharge at different substrate temperatures in the range 50–330°C. Gas phase doping levels were 1%. At the lower temperatures the hydrogen concentration in the B doped and compensated doped films is larger than in the P and undoped films. For higher deposition temperatures the H concentration of the B doped films appeared to be smaller than in the other materials. The difference in hydrogen content of the doped and undoped material, deposited at various temperatures, is considered as a function of the measured activation energy for conduction in these films. This difference varies in much the same way with the activation energy as the hydrogen content in films deposited at one substrate temperature, but with varying gas phase dopant levels. This represents strong evidence that, apart from the deposition temperature, the hydrogen concentration in glow discharge a-Si:H is determined by the position of the Fermi level.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 192: Symposium O – Amorphous Silicon Technology - 1990 , 1990 , 133
Copyright
Copyright © Materials Research Society 1990

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References

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