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Effect of Pressure on Self Diffusion in Crystalline Silicon

Published online by Cambridge University Press:  21 February 2011

M. J. Aziz ,
E. Nygren ,
W. H. Christie ,
C. W. White  and
D. Turnbull
M. J. Aziz
Affiliation:
Oak Ridge National Laboratory, Oak Ridge TN 37831.
E. Nygren
Affiliation:
Division of Applied Sciences, Harvard University, Cambridge MA 02138.
W. H. Christie
Affiliation:
Oak Ridge National Laboratory, Oak Ridge TN 37831.
C. W. White
Affiliation:
Oak Ridge National Laboratory, Oak Ridge TN 37831.
D. Turnbull
Affiliation:
Division of Applied Sciences, Harvard University, Cambridge MA 02138.
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Abstract

The effect of pressure on self diffusion in crystalline silicon is being studied using 30Si as a tracer. Diffusion experiments have been carried out in the pressure range of 1 to 35000 atmospheres at 1000°C. The 30Si is observed to diffuse faster at high pressures, indicating a negative activation volume.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 36: Symposium C – Impurity Diffusion and Gettering in Silicon , 1984 , 101
Copyright
Copyright © Materials Research Society 1985

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References

REFERENCES

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