Hostname: page-component-848d4c4894-hfldf Total loading time: 0 Render date: 2024-05-07T17:32:24.942Z Has data issue: false hasContentIssue false
  • English
  • Français

Characterization of Few layer Tungsten diselenide based FET under Thermal Excitation

Published online by Cambridge University Press:  17 July 2017

Avra S Bandyopadhyay ,
Gustavo A. Saenz  and
Anupama Kaul
Avra S Bandyopadhyay
Affiliation:
Electrical and Computer Engineering Department, University of Texas, El Paso, TX, U.S.A
Gustavo A. Saenz
Affiliation:
Electrical and Computer Engineering Department, University of Texas, El Paso, TX, U.S.A
Anupama Kaul*
Affiliation:
Electrical and Computer Engineering Department, University of Texas, El Paso, TX, U.S.A
*
*Corresponding Author Email: akaul@utep.edu
Get access

Abstract:

Two-dimensional (2D) materials are very promising with respect to their integration into optoelectronic devices. Monolayer tungsten diselenide (WSe2) is a direct-gap semiconductor with a bandgap of ∼1.6eV, and is therefore a complement to other two-dimensional materials such as graphene, a gapless semimetal, and boron nitride, an insulator. The direct bandgap distinguishes monolayer WSe2 from its bulk and bilayer counterparts, which are both indirect gap materials with smaller bandgaps. This sizable direct bandgap in a two-dimensional layered material enables a host of new optical and electronic devices. In this work, a comprehensive analysis of the effect of optical excitation on the transport properties in few-layer WSe2 is studied. Monolayer WSe2 flakes from natural WSe2 crystals were transferred onto Si/SiO2 (270nm) substrates by mechanical exfoliation. The flakes were observed under an optical microscope. A FET based on mechanically exfoliated WSe2 was fabricated using photolithography with Molybdenum as metal contact and Silicon as back gate and the electronic properties were measured in a wide range of temperatures. The mobility of our device was found to be 0.2 cm /V-S at room temperature. The schottky barrier height was found to decrease from 80 meV to 25 meV as the gate voltage increases.

Keywords

Wthin filmelectrical properties
Type
Articles
Information
MRS Advances , Volume 2 , Issue 60: Nanomaterials , 2017 , pp. 3721 - 3726
Copyright
Copyright © Materials Research Society 2017 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

Reference:

Geim, A. K., Novoselov, K. S., Nat. Mater. 6, 183–191 (2007).Google Scholar
Huang, X., Qi, X. Y., Boey, F., Zhang, H., Chem. Soc. Rev. 41, 666–686 (2012).CrossRefGoogle Scholar
Huang, X., Small, 14, 1876–902 (2014).Google ScholarPubMed
Schwierz, F., Nat. Nanotechnol. 5, 487–496, (2010).CrossRefGoogle Scholar
Weiss, N. O., Adv. Mater. 24, 5782–5825 (2012).CrossRefGoogle Scholar
Kaasbjerg, K., Thygesen, K. S., Jacobsen, K. W., Physical Review B 85, 115317 (2012).CrossRefGoogle Scholar
Kim, S., Nat. Commun.3, 1011 (2012).Google Scholar
Chamlagain, B., Li, Q., ACS Nano, , 8 5079–5088, (2014).Google Scholar
Mak, K. F., Lee, , Hone, C. J., Shan, J., Heinz, T. F., Phys. Rev. Lett. 105, 136805 (2010).CrossRefGoogle Scholar
Splendiani, A., Nano Lett. 10, 1271–1275 (2010).CrossRefGoogle Scholar
Radisavljevic, B., Radenovic, A., Brivio, J., Giacometti, V., Kis, A., Nat. Nanotechnol. 6, 147–150 (2011).Google Scholar
Terrones, H., Lopez-Urias, F., Terrones, M., Sci. Rep, 3, 1549 (2013).Google Scholar
Kumar, A., Ahluwalia, P. K., Eur. Phys. J. B, 85, 6 (2012).Google Scholar
Najmaei, S. J., Nat. Mater. 12, 754–759 (2013).Google Scholar
Wang, Q. H., Kalantar-Zadeh, K., Kis, A., Coleman, J. N., Strano, M. S., Nat. Nanotechnol. 7, 699–712 (2012).CrossRefGoogle Scholar
Yu, W. J., Nat. Nanotechnol. 8, 952–958 (2013).CrossRefGoogle Scholar
Yu, W. J., Nat. Mater. 12, 246–252 (2013).Google Scholar
Zhu, C. F., Zeng, Z. Y., Li, H., Li, F., Fan, C. H., Zhang, H. J., Am. Chem. Soc. 135, 5998–6001 (2013).CrossRefGoogle Scholar
Fang, H., Chuang, S., Chang, T. C., Takei, K., Takahashi, T., Javey, A., Nano Lett. 12, 3788–3792 (2012).Google Scholar
Castellanos-Gomez, A., 2D Mater 1, 11002 (2013).Google Scholar
Kim, S., Nat. Commun. 3, 1011 (2012).Google Scholar
Chen, J. H., Nat. Phys. 4, 377–381 (2008).Google Scholar
Ross, J. S, Nat. Nanotechnol. 9, 268–272 (2014).Google Scholar
Das Sarma, S., Hwang, E. H., Phys. Rev. B, 89, 235423 (2014).CrossRefGoogle Scholar