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Quantitative Studies on the Evolution of the Polysilicon/Silicon Interfacial Oxide Upon Annealing

Published online by Cambridge University Press:  25 February 2011

Sergio A. Ajuria  and
Rafael Reif
Sergio A. Ajuria
Affiliation:
Department of Materials Science and Engineering
Rafael Reif
Affiliation:
Department of Electrical Engineering & Computer Science Massachusetts Institute of Technology, Cambridge, MA 02139
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Abstract

Polysilicon/silicon interfacial oxides are shown by cross-sectional Transmission Electron Microscopy studies to agglomerate upon annealing. In addition to presenting highlights of microscopy results, we report on electrical characterization data obtained from Cross-Bridge Kelvin Resistors. Resistor data not only support a model for agglomeration proven on microscopy data, but also allow for a quantitative macroscopic understanding of the agglomeration of polysilicon/silicon interfacial oxides over a wide range of times and temperatures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 202: Symposium C – Evolution of Thin Film and Surface Microstructure , 1990 , 107
Copyright
Copyright © Materials Research Society 1991

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References

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