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Analysis of transconductance characteristic of AlGaN/GaN HEMTs with graded AlGaN layer

Published online by Cambridge University Press:  05 June 2014

Shenqi Qu ,
Xiaoliang Wang ,
Hongling Xiao ,
Cuimei Wang ,
Lijuan Jiang ,
Chun Feng ,
Hong Chen ,
Haibo Yin ,
Enchao Peng  and
He Kang
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Shenqi Qu
Affiliation:
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, 100083 Beijing, P.R. China
Xiaoliang Wang*
Affiliation:
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, 100083 Beijing, P.R. China Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, 100083 Beijing, P.R. China ISCAS-XJTU Joint Laboratory of Functional Materials and Devices for Informatics, 710049 Xi’an, P.R. China
Hongling Xiao
Affiliation:
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, 100083 Beijing, P.R. China
Cuimei Wang
Affiliation:
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, 100083 Beijing, P.R. China
Lijuan Jiang
Affiliation:
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, 100083 Beijing, P.R. China
Chun Feng
Affiliation:
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, 100083 Beijing, P.R. China
Hong Chen
Affiliation:
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, 100083 Beijing, P.R. China
Haibo Yin
Affiliation:
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, 100083 Beijing, P.R. China
Enchao Peng
Affiliation:
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, 100083 Beijing, P.R. China
He Kang
Affiliation:
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, 100083 Beijing, P.R. China
Zhanguo Wang
Affiliation:
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, 100083 Beijing, P.R. China Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, 100083 Beijing, P.R. China
Xun Hou
Affiliation:
ISCAS-XJTU Joint Laboratory of Functional Materials and Devices for Informatics, 710049 Xi’an, P.R. China
*
ae-mail: xlwang@semi.ac.cn
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Abstract

A theoretical study of transconductance characteristics (gm − Vgs profile) of AlGaN/GaN high electron mobility transistors (HEMTs) with a graded AlGaN layer is given in this paper. The calculations were made using a self-consistent solution of the Schrödinger-Poisson equations and an AlGaN/GaN HEMTs numerical device model. Transconductance characteristics of the devices are discussed while the thickness and Al composition of the graded AlGaN layer are optimized. It is found that graded AlGaN layer structure can tailor device’s gm − Vgs profile by improving polar optical phonon mobility and interface roughness mobility. Good agreement is obtained between the theoretical calculations and experimental measurements over the full range of applied gate bias.

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 66 , Issue 2 , May 2014 , 20101
Copyright
© EDP Sciences, 2014

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