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Stark Splitting in Photoluminescence Spectra of Er in a-Si:H

Published online by Cambridge University Press:  01 February 2011

Minoru Kumeda ,
Mitsuo Takahashi ,
Akiharu Morimoto  and
Tatsuo Shimizu
Minoru Kumeda
Affiliation:
Division of Electrical Engineering and Computer Science, Graduate School of Natural Science & Technology, Kanazawa University
Mitsuo Takahashi
Affiliation:
Division of Electrical Engineering and Computer Science, Graduate School of Natural Science & Technology, Kanazawa University
Akiharu Morimoto
Affiliation:
Division of Electrical Engineering and Computer Science, Graduate School of Natural Science & Technology, Kanazawa University
Tatsuo Shimizu
Affiliation:
NTT Microsystem Integration Labs., Atsugi 243-0198, Japan.
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Abstract

The photoluminescence spectra due to Er ions doped in a-Si:H were decomposed into several lines. The 19-K spectrum was reproduced by adding four Gaussian lines whose linewidths were increased with decreasing the photon energy. Since only the lowest energy level of 4I13/2 contributes to the radiative transition at this low temperature, the energy levels in 4I15/2 split by the Stark effect can be determined. These splittings are not largely different from those for Er in aluminosilicate glass. This implies that the all nearest neighbors of Er are oxygens which have been introduced unintentionally in the sample during preparation. The change in the photoluminescence intensity by annealing is discussed in relation with the spectral change and the results of ESR measurements.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 862: Symposium A – Amorphous and Nanocrystalline Silicon Science and Technology–2005 , 2005 , A18.1
Copyright
Copyright © Materials Research Society 2005

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References

1 Polman, A., J. Appl. Phys. 82, 1 (1997).10.1063/1.366265Google Scholar
2 Yassievich, I., Bresler, M. and Gusev, O., J. Non-Cryst. Solids 226, 192 (1998).10.1016/S0022-3093(98)00357-3Google Scholar
3 Fuhs, W., Ulber, I., Weiser, G., Bresler, M. S., Gusev, O. B., Kuznetsov, A. N., Kudoyarova, V. Kh., Terukov, E. I. and Yassievich, I. N., Phys. Rev. B 56, 9545 (1997).10.1103/PhysRevB.56.9545Google Scholar
4 Desurvire, D. and Simpson, J. R., Opt. Lett. 15, 547 (1990).10.1364/OL.15.000547Google Scholar
5 Wortman, D. E., Morrison, C. A. and Bradshaw, J. L., J. Appl. Phys. 82, 2580 (1997).10.1063/1.366069Google Scholar
6 Huang, C., McCaughan, L. and Gill, D. M., J. Lightwave Technol. 12, 803 (1994).10.1109/50.293972Google Scholar
7 Masterov, V. F., Nasredinov, F. S., Seregin, P. P., Kudoyarova, V. Kh., Kuznetsov, A. N. and Terukov, E. I., Appl. Phys. Lett. 72, 728 (1998).10.1063/1.120866Google Scholar
8 Tessler, L. R., Piamonteze, C., Alves, M. C. M. and Tolentino, H., J. Non-Cryst. Solids 266-269, 598 (2000).10.1016/S0022-3093(99)00750-4Google Scholar