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Thermally Induced Deformation and Stresses During Millisecond Flash Lamp Annealing

Published online by Cambridge University Press:  01 February 2011

Mark Smith ,
Keith A. Seffen ,
Richard A. McMahon ,
Wolfgang Anwand  and
Wolgang Skorupa
Mark Smith
Affiliation:
mps38@cam.ac.uk, University of Cambridge, Department of Engineering, Trumpington Street, Cambridge, Cambridgeshire, CB2 1PZ, United Kingdom
Keith A. Seffen
Affiliation:
kas14@eng.cam.ac.uk, University of Cambridge, Department of Engineering, Trumpington Street, Cambridge, Cambridgeshire, CB2 1PZ, United Kingdom
Richard A. McMahon
Affiliation:
ram1@eng.cam.ac.uk, University of Cambridge, Department of Engineering, Trumpington Street, Cambridge, Cambridgeshire, CB2 1PZ, United Kingdom
Wolfgang Anwand
Affiliation:
w.anwand@fz-rossendorf.de, Forschungszentrum Rossendorf, Institute of Ion Beam Physics and Materials Research, Dresden, Saxony, N/A, Germany
Wolgang Skorupa
Affiliation:
w.skorupa@fz-rossendorf.de, Forschungszentrum Rossendorf, Institute of Ion Beam Physics and Materials Research, Dresden, Saxony, N/A, Germany
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Abstract

A flash lamp has been proposed for annealing wafers with diameters approaching 100 mm. The equipment applies a pulse, with duration 0.5 ms to 20 ms, resulting in large transient thermal gradients in the wafer. In this paper, we present a model for the thermal reaction of this process and its effect upon the mechanical behaviour, in order to predict stresses, shape changes and to capture practical phenomenon, such as bifurcation of deformation modes. We then use the model to follow changes in the expected response consequent on altering process conditions, as well as exploring important issues associated with scaling to large wafer sizes. The model is further used to predict material yielding leading to permanent deformations. This work presents the first description of the thermo-mechanical response of wafers to flash lamp annealing in the millisecond time regime and is therefore fundamental to the use of this technique in the fabrication of semiconductor devices.

Keywords

annealingthermal stressessimulation
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 912: Symposium C – Doping Engineering for Device Fabrication , 2006 , 0912-C04-08
Copyright
Copyright © Materials Research Society 2006

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