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An Investigation of Buried Layer Formation by 40keV Oxygen Implantation Into Silicon

Published online by Cambridge University Press:  28 February 2011

Y. Li ,
J. A. Kilner ,
R. J. Chater ,
T. J. Tate ,
P. L. F. Hemment  and
A. Nejim
Y. Li
Affiliation:
Department of Materials, Imperial College, London SW7 2BP, UK
J. A. Kilner
Affiliation:
Department of Materials, Imperial College, London SW7 2BP, UK
R. J. Chater
Affiliation:
Department of Materials, Imperial College, London SW7 2BP, UK
T. J. Tate
Affiliation:
Department of Electronic and Electrical Engineering, Imperial College, London SW7 2BP, UK
P. L. F. Hemment
Affiliation:
Department of Electronic and Electrical Engineering, University of Surrey, Guildford, Surrey GU2 5XH, UK
A. Nejim
Affiliation:
Department of Electronic and Electrical Engineering, University of Surrey, Guildford, Surrey GU2 5XH, UK
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Abstract

Device grade single crystal <100> silicon wafers have been implanted with 40keV oxygen ions over a dose range of 2×1017 to 8×1017/cm2 at a temperature of 5507±10°C. The specimens have been analyzed, both before and after high-temperature annealing at 1320°C for six hours, using SIMS, RBS, and TEM. During implantation a continuous buried SiO2 layer forms when the dose after which the buried SiO2 layer grows primarily toward the surface. After annealing samples implanted with the doses of both 2×1017 and 3×1017/cm2 it was observed that a defective SIMOX like structure was formed. Implanting with a dose of 4×1017/cm2 results in pit formation in the silicon overlayer. For the sample implanted with a higher dose of 5×1017/cm2, a non-continuous poly-crystalline silicon “overlayer” was formed. It would thus appear that when a single step implantation route is chosen, there is a dose (or layer thickness) limit for the production of a thin film SIMOX structure.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 235: Symposium A – Phase Formation and Modification by Beam-Solid Interactions , 1991 , 115
Copyright
Copyright © Materials Research Society 1992

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References

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