Hostname: page-component-76fb5796d-5g6vh Total loading time: 0 Render date: 2024-04-26T05:34:43.968Z Has data issue: false hasContentIssue false
  • English
  • Français

Morphological Features of the Solid-Liquid Interface of a Gallium Film

Published online by Cambridge University Press:  21 February 2011

Richard D. Robinson  and
Ioannis N. Miaoulis
Richard D. Robinson
Affiliation:
Thermal Analysis of Materials Processing Laboratory, Mechanical Engineering Department, Tufts University, Med ford, MA 02155
Ioannis N. Miaoulis*
Affiliation:
Thermal Analysis of Materials Processing Laboratory, Mechanical Engineering Department, Tufts University, Med ford, MA 02155
*
* author to whom correspondence should be addressed
Get access

Abstract

This paper presents a new experimental method to investigate solid-liquid interface morphologies during Zone-Melting-Recrystallization at lower than the typical processing temperatures. Gallium films were used as a substitute for silicon films. In situ preliminary investigation identified three phenomena typically occurring during ZMR of silicon films: a) Transition from planar to dendritic to cellular morphologies was observed for different processing conditions; b) cell period proved to be dependant on scanning velocity; c) instabilities at the solidification interface at low heating strip temperatures were caused by supercooling and optical property variations as the material changed phase.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 237: Symposium Ca – Interface Dynamics and Growth , 1991 , 139
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Geis, M. W., Smith, H. I., Silversmith, D. J., Mountain, R. W., and Thompson, C. V., “Solidification-Front Modulation to Entrain Subboundaries in Zone-Melting Recrystallization of Si on SiO2 .” J. Electrochem. Soc. 130. 5 (1983) p. 1178 CrossRefGoogle Scholar
2. Pfeiffer, L., Gelman, A. E., Jackson, K. A., West, K. W., and Batstone, J. L., “Subboundary-free Zone-melt Recrystallization of Thin-film silicon,” Appl. Phys. Lett. 51. 16 (1987) p. 1256 CrossRefGoogle Scholar
3. Leamy, H. J., Chang, C. c., Baumgart, H., Lemons, R. A., and Cheng, J., “Cellular Growth in Micro-zone Melted Silicon,” Mat. Lett. 1. 1 (1982) p. 33 Google Scholar
4. Limanov, A. B. and Givargizov, E. I., “Control of the Structures in Zone-melted Silicon Films on Amorphous Substrates,” Matt. Lett. 2, 2 (1983) p. 93 Google Scholar
5. Dutartre, D., “ In-situ Observation of Lamp Zone Melting of Si Films on Patterned SiO2 ,” Appl. Phvs. Lett. 48. 5 (1986) p. 350 Google Scholar
6. Dutartre, D., Haond, M., and Bensahel, D., “Microscopy of Thin Si Films During Lamp Zone Melting,” Mat. Res. Soc. Proc, 53 (1986) p. 89 Google Scholar
7. Im, J. S., Tomita, H., and Thompson, C.V., “Cellular and Dendritic Morphologies on Stationary and Moving Liquid-solid Interfaces in Zone-melting Recrystallization,” Appl. Phys. Lett. 51, 9 (1987) p. 685 Google Scholar
8. Im, J. S., Thompson, C. V., and Tornita, H., “Solidification Interface Morphologies in Zone Melting Recrystallization,” Mat. Res. Soc. Proc, 74 (1987) p. 555 Google Scholar
9. Im, J. S., Chen, C. K., Thompson, C.V., Geis, M. W., and Tomita, H., “Liquid-solid Interface Morphologies and Defect Structures in Zone-melting-recrystallized Silicon-on-insulator Films,” Mat. Res. Soc. Proc, 107 (1988) p. 169 CrossRefGoogle Scholar
10. Im, J. S., Doctor of Philosophy Thesis, Massachusetts Institute of Technology, 1989.Google Scholar
11. Jackson, K. A., in Liquid Metals and Solidification, (ASM, Cleveland, 1958), p. 175 Google Scholar
12. Jackson, K. A., in Growth and Perfection of Crystals, ed. by Doremus, R.H., Turnbull, D., and Roberts, B. W., (Wiley, NY, 1958), p. 319 Google Scholar
13. Jackson, K. A. and Hunt, J. D., “Transparent Compounds that Freeze Like Metals,” Acta Met‥ 13 (1965) p. 1212 Google Scholar
14. Jackson, K. A., “The Present State of the Theory of Crystal Growth from the Melt,” J. Crystal Growth 24/25 (1974) p. 130 CrossRefGoogle Scholar
15. Jackson, K. A. and Kurtze, D. A., “Instability in Radiatively Melted Silicon Films,” J. Crystal Growth 71 (1985) p. 385 Google Scholar