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Nanomagnetic Ni-Array in Porous Silicon as a Possible Magnetic Field Sensor in the High Field Range up to 7 T

Published online by Cambridge University Press:  15 February 2011

P. Granitzer ,
K. Rumpf  and
H. Krenn
P. Granitzer
Affiliation:
Institute of Physics, Karl-Franzens-University Graz, Universitaetsplatz 5, A-8010 Graz, Austria
K. Rumpf
Affiliation:
Institute of Physics, Karl-Franzens-University Graz, Universitaetsplatz 5, A-8010 Graz, Austria
H. Krenn
Affiliation:
Institute of Physics, Karl-Franzens-University Graz, Universitaetsplatz 5, A-8010 Graz, Austria
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Abstract

A highly doped n-type silicon wafer is anodized in an aqueous hydrofluoric acid solution to generate a porous silicon skeleton with a convenient morphology. After drying, the mesoporous sample is exposed to an electrodeposition process in which the pores are filled with the ferromagnetic metal Ni. Anodization and deposition of Ni lead to a ferromagnetic nanoscopic system which shows an interesting behaviour in the high field range (> 3 T). In addition to the expected low field switching below 500 Oe a second switching at fields of a few Tesla with a steep slope is also present. This feature with its extremely high sensitivity for changes of the external magnetic field gives rise to high magnetic field sensor applications based on a silicon technology.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 876: Symposium A – Nanoporous and Nanostructured Materials for Catalysis, Sensor and Gas Separation Applications , 2005 , R8.9
Copyright
Copyright © Materials Research Society 2005

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