Hostname: page-component-76fb5796d-2lccl Total loading time: 0 Render date: 2024-04-26T15:52:06.475Z Has data issue: false hasContentIssue false
  • English
  • Français

High Deposition Rate of Microcrystalline Silicon for n-i-p Solar Cell by Using VHF PECVD Method

Published online by Cambridge University Press:  26 February 2011

Jun-Chin Liu ,
Chin-jeng Huang ,
Techi Wong ,
Jian-Shu Wu ,
Yih-Rong Luo  and
Chi-Lin Chen
Jun-Chin Liu
Affiliation:
TeChiWong@itri.org.tw, Industrial Technology Research Institute, Photovoltaics Technology Center, Rm.221, Bidg. 67, 195 Sec.4, Chung Hsing Rd. Chutung, Hsinchu, 310, Taiwan, 886-3-5917420, 886-3-5820383
Chin-jeng Huang
Affiliation:
CJ_Huanga@itri.org.tw, ITRI, Hsinchu, 310, Taiwan
Techi Wong
Affiliation:
TeChiWong@itri.org.tw, ITRI, PVTC, Hsinchu, 310, Taiwan
Jian-Shu Wu
Affiliation:
LittleTree@itri.org.tw, ITRI, Hsinchu, 310, Taiwan
Yih-Rong Luo
Affiliation:
YRLuo@itri.org.tw, ITRI, Hsinchu, 310, Taiwan
Chi-Lin Chen
Affiliation:
superlulu@itri.org.tw, ITRI, Hsinchu, 310, Taiwan
Get access

Abstract

P doped, intrinsic, and n doped microcrystalline silicon (μc-Si) thin films were successfully synthesized on 10×10 cm2 transparent conductive oxide (TCO) /glass substrate by using a Very High Frequency Plasma Enhanced Chemical Vapor Deposition (VHF-PECVD, 80MHz) single chamber system. The crystal fraction of p and n type μc-Si:H with a thickness of 100nm was over 70% and 80%, respectively. Intrinsic μc-Si:H was deposited at a substrate temperature of 250°C with a high deposition rate over 1 nm/s. Photo-current/dark-current ratio of intrinsic μc-Si:H was higher than 102. The optimum cell initial efficiency of μc-Si:H single junction solar cell had been achieved 7.03 % so far.

Keywords

photovoltaicSithin film
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 974: Symposium CC – Solar Energy Conversion , 2006 , 0974-CC10-31
Copyright
Copyright © Materials Research Society 2007

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Yamamoto, K., et al., conference paper presented in WCEPC-3, Osaka, Japan, 12–18, (2003)Google Scholar
2. Vetterl, O., Hapke, P., Finger, F, Houben, L., Luysberg, M., Wanger, H., Journal of Non-crystalline solids, 227–230, 866 (1998)10.1016/S0022-3093(98)00198-7Google Scholar
3. Nakahata, K., Ro, K., Kamiya, T., Fortmann, C. M., Shimizu, I., Japanese Journal of Applied Physics, 38, 5762 (1999).Google Scholar
4. Terasa, R. et al., Journal of non-crystalline solids, 266–269, 95–99 (2000)10.1016/S0022-3093(99)00746-2Google Scholar
5. Koh, J. et al., Journal of non-crystalline solids, 266–269, 43–47 (2000)Google Scholar
6. Stiebig, H. et al., Solar Energy Materials and Solar cells, 48, 351–363 (1997)10.1016/S0927-0248(97)00147-5Google Scholar
7. Kocka, J. et al., Solar Energy Materials and Solar cells, 78, 493–512 (1997)Google Scholar
8. Terasa, R. et al., Solar Energy Materials and Solar cells, 46, 157–172 (1997)Google Scholar