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Studies of Defects and Limits of Solid Solubility in SPE Grown in and Sb Implanted Silicon

Published online by Cambridge University Press:  15 February 2011

J. Narayan  and
O. W. Holland
J. Narayan
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37830
O. W. Holland
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37830
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Abstract

Transmission electron microscopy (plan-view as well as cross-section) and high-resolution Rutherford backscattering and channeling techniques have been combined to investigate residual defects and substitutional concentrations of In and Sb in <100> and <111> orientations of ion implanted silicon layers after solid-phase-epitaxial (SPE) growth at 475–600°C. The maximum concentrations of Sb and In in substitutional sites were found to be, respectively, 1.3 × 1021 and 5.0 × 1019 cm−3 , exceeding the respective retrograde maxima by factors of 18 and 60. These results provide direct evidence of solute trapping and metastable alloying under solid-phase growth conditions. Accumulation of solute at the crystalline-amorphous interface was observed only for indium above a certain interfacial concentration. At still higher interfacial concentrations, the planar interface was observed to become unstable and SPE growth was retarded.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 7 , 1981 , 117
Copyright
Copyright © Materials Research Society 1982

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Footnotes

*

Research sponsored by the Division of Materials Sciences, U. S. Department of Energy under contract W-7405-eng-26 with Union Carbide Corporation.

References

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