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High Performance Polymer Thin Film Transistors Array Printed on a Flexible Polycarbonate Substrate

Published online by Cambridge University Press:  11 February 2011

Sung Kyu Park ,
Jeong In Han ,
Dae Gyu Moon ,
Won Keun Kim  and
Yong Hoon Kim
Sung Kyu Park
Affiliation:
Information Display Research Center, Korea Electronics Technology Institute, Pyungtaek, Kyunggi, Korea.
Jeong In Han
Affiliation:
Information Display Research Center, Korea Electronics Technology Institute, Pyungtaek, Kyunggi, Korea.
Dae Gyu Moon
Affiliation:
Information Display Research Center, Korea Electronics Technology Institute, Pyungtaek, Kyunggi, Korea.
Won Keun Kim
Affiliation:
Information Display Research Center, Korea Electronics Technology Institute, Pyungtaek, Kyunggi, Korea.
Yong Hoon Kim
Affiliation:
Information Display Research Center, Korea Electronics Technology Institute, Pyungtaek, Kyunggi, Korea.
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Abstract

High performance poly (3-hexylthiophene) (P3HT) thin film transistors (TFTs) array was fabricated on a polycarbonate substrate by micro-contact printing method. A thin polyimide layer (40 nm) was applied before silicon oxide deposition to improve the electrical properties of the TFT device. Also, the effects of O2 plasma treatment on the field effect mobility and output current behaviors of the devices were investigated. By plasma treatment, the surface roughness of gate dielectric was improved which accounts for the increased field effect mobility and the hole Schottky barrier height in electrode/semiconductor interface was lowered resulting in large drain current in the device. Based on the experiments, we fabricated P3HT TFTs array with 0.025 cm2/V·s in saturation field effect mobility and on/off current ratio of 103 ∼ 104 on a polycarbonate substrate.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 736: Symposium D – Electronics on Unconventional Substrates–Electrotextiles and Giant-Area Flexible Circuits , 2002 , D7.3
Copyright
Copyright © Materials Research Society 2003

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References

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