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Reversible Multi-level Resistance Switching of Ag-La0.7Ca0.3MnO3-Pt Heterostructures

Published online by Cambridge University Press:  01 February 2011

Dashan Shang ,
Lidong Chen ,
Qun Wang ,
Zihua Wu ,
Wenqing Zhang  and
Xiaomin Li
Dashan Shang
Affiliation:
shangdashan@mail.sic.ac.cn, Chinese Academy of Sciences, Shanghai Institute of Ceramics, No. 1295, Dingxi Road, Shanghai City, Shanghai, 200050, China, People's Republic of
Lidong Chen
Affiliation:
cld@mail.sic.ac.cn, Chinese Academy of Sciences, Shanghai Institute of Ceramics, Shanghai, 200050, China, People's Republic of
Qun Wang
Affiliation:
wangqun@mail.sic.ac.cn, Chinese Academy of Sciences, Shanghai Institute of Ceramics, Shanghai, 200050, China, People's Republic of
Zihua Wu
Affiliation:
zhwu@mail.sic.ac.cn, Chinese Academy of Sciences, Shanghai Institute of Ceramics, No. 1295, Dingxi Road, Shanghai, 200050, China, People's Republic of
Wenqing Zhang
Affiliation:
wqzhang@mail.sic.ac.cn, Chinese Academy of Sciences, Shanghai Institute of Ceramics, No. 1295, Dingxi Road, Shanghai, 200050, China, People's Republic of
Xiaomin Li
Affiliation:
shangdashan@mail.sic.ac.cn, Chinese Academy of Sciences, Shanghai Institute of Ceramics, No. 1295, Dingxi Road, Shanghai, 200050, China, People's Republic of
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Abstract

Resistance random access memory (RRAM) has attracted intense attention in recent years for the potential application as nonvolatile memory. One of the tempting properties of RRAM is the multi-level memory, in which several resistance states can be obtained and each of them can be used to save information. In this paper, the electric-pulse-induced multi-level resistance switching of the Ag-La0.7Ca03MnO3-Pt heterostructures was studied. The multi-level resistance switching (MLRS) was observed in the switching from high to low resistance state (HRS→LRS) by applying electric pulse with various pulse voltages. The threshold pulse voltages of MLRS are related to the initial resistance values as well as the switching directions. On the other hand, the resistance switching behavior from low to high resistance states (LRS→HRS) shows unobvious MLRS. MLRS was explained by the parallel effect of multi-filament forming/rupture in the Ag/La0.7Ca0.3MnO3 interface layer. The present results suggest a possible application of Ag-La0.7Ca03MnO3-Pt heterostructures as multi-level memory devices.

Keywords

memorylaser ablationthin film
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 997: Symposium I – Materials and Processes for Nonvolatile Memories II , 2007 , 0997-I07-13
Copyright
Copyright © Materials Research Society 2007

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