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Stability of Ensembles of Ge/Si(100) Islands

Published online by Cambridge University Press:  10 February 2011

Y. Zhang  and
Jeff Drucker
Y. Zhang
Affiliation:
Materials Research Institute, The University of Texas at El Paso, El Paso, TX 79968-0515
Jeff Drucker
Affiliation:
Materials Research Institute, The University of Texas at El Paso, El Paso, TX 79968-0515 Physics Department, The University of Texas at El Paso, El Paso, TX 79968-0515
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Abstract

We have investigated the stability of ensembles of Ge/Si(100) islands by annealing at their growth temperature. Islands grown by molecular beam epitaxy at temperatures of 450, 550, 600 and 650°C were annealed for times between 5 and 120 minutes. Small, pure Ge hut clusters, bound by {105} facets appear to be extremely stable structures, surviving the longest anneals with no apparent coarsening. Dome clusters, however, coarsen. Large alloyed hut clusters, apparent in as-grown samples only for growth temperatures greater than 600°C, appear during annealing at 450 and 550°C. During anneals at 550 and 650°C, we observe novel coarsening behavior. Arrays of crystallographically oriented, alloyed hut clusters are formed which result from the dissolution of large, alloyed dome clusters.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 618: Symposium K – Morphological & Compositional Evolution of Heteroepitaxial… , 2000 , 123
Copyright
Copyright © Materials Research Society 2000

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References

REFERENCES

1 Mo, Y. -W., Savage, D.E., Swartzentruber, B.S. and Lagally, M.G., Phys. Rev. Lett. 65, 1020 (1990).Google Scholar
2 Tomitori, M., Watanabe, K., Kobayashi, M and Nishikawa, O., Appl. Surf. Sci. 76/77, 322 (1994).Google Scholar
3 Medeiros-Ribeiro, G., Kamins, T.I., Ohlberg, D.A.A. and Williams, R. Stanley, Phys. Rev. B 58, 3533 (1998).Google Scholar
4 Medeiros-Ribeiro, G., Bratkovski, A. M. and Williams, R.S., Science 279, 353(1998).Google Scholar
5 Chaparro, S. A., Zhang, Y., Drucker, Jeff, Chandrasekhar, D., Smith, David J., J. Appl. Phys., 87, 2245 (2000).Google Scholar
6 Chaparro, S. A., Drucker, Jeff, Zhang, Y., Chandrasekhar, D., McCartney, M. R. and Smith, David J., Phys. Rev. Lett. 83, 1199, (1999).Google Scholar
7 Kamins, T.I., Medeiros-Ribeiro, G., Ohlberg, D.A.A., and Williams, R.S., J. Appl. Phys., 85, 1159(1999).Google Scholar
8 Floro, J. A., Sinclair, M.B., Chason, E., Freund, L.B., Twesten, R.D., Hwang, R.Q., Lucadamo, G.A., Phys. Rev. Lett. 84 (4), 701 (2000).Google Scholar
9 Kamins, T.I., Medeiros-Ribeiro, G., Ohlberg, D.A.A., and Williams, R.S., Appl. Phys. A, 67, 1 (1998).Google Scholar
10 Tromp, R.M., Mankos, M., Phys. Rev. Lett. 81, 1050 (1998).Google Scholar
11 Chaparro, S.A., Zhang, Y., Drucker, Jeff, Appl. Phys. Lett. (in press)Google Scholar
12 Liao, X. Z., Zuo, J., Cockayne, D. J. H., Qin, J., Jiang, Z. M., Wang, X. and Leon, R., Phys. Rev. B 60, 15,605 (1999).Google Scholar
13 Floro, J.A., Chason, E., Twesten, R.D., Hawang, R.Q. and Freund, L.B., Phys. Rev. Lett. 79, 3946 (1997).Google Scholar