Hostname: page-component-76fb5796d-9pm4c Total loading time: 0 Render date: 2024-04-27T04:17:13.074Z Has data issue: false hasContentIssue false
  • English
  • Français

How Epitaxial Are Pd2Si–Si Interfaces?

Published online by Cambridge University Press:  15 February 2011

Z. Liliental ,
R. W. Carpenter  and
R. Tuenge
Z. Liliental*
Affiliation:
Center for Solid State Science, Arizona State University, Tempe, AZ 85287, (U.S.A.) and Tektronix, Beaverton, (OR U.S.A.)
R. W. Carpenter
Affiliation:
Center for Solid State Science, Arizona State University, Tempe, AZ 85287, (U.S.A.) and Tektronix, Beaverton, (OR U.S.A.)
R. Tuenge
Affiliation:
Center for Solid State Science, Arizona State University, Tempe, AZ 85287, (U.S.A.) and Tektronix, Beaverton, (OR U.S.A.)
*
† Present address: Department of Electrical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, U.S.A.
Get access

Abstract

Pd2Si layers produced by evaporation or sputtering onto silicon substrates were examined by high resolution electron microscopy, microdiffraction, X-ray, energy loss and Auger spectroscopy. The Si-Pd2Si interfaces produced by evaporation were in all cases rougher and more polycrystalline than those produced by sputtering. X-ray microanalysis showed the predictable variation in palladium distribution across the interface but quantification did not produce the expected palladium–to–silicon ratios, primarily because of probe broadening and X-rayinduced fluorescence. Energy loss spectra showed plasmon energy shifts and changes in Si L edge shape due to bond formation with palladium. Auger data provided evidence for a small amount of oxygen at the Si-Pd2Si interface. Electrical measurements of the ideality factor for Schottky barriers made from these materials produced higher values for the rougher evaporation-formed interfaces consistent with interface-roughness-induced scattering and carrier recombination.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 18: Symposium C – Interfaces and Contacts , 1982 , 17
Copyright
Copyright © Materials Research Society 1982

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Cherns, D. and Smith, D. A., in Narayan, J. and Tan, T. (eds.), Defects in Semiconductors, North-Holland, Amsterdam, 1981, p. 291.Google Scholar
2 Kuan, T. S. and Tu, K. N., Proc. 9th Int. Congr. on Electron Microscopy, Toronto, 1978, in Physics, 1 (1978) 304.Google Scholar
3 Nylund, A., Acta Chem. Scand., 20 (1966) 2381.Google Scholar
4 Bentley, J., Zaluzec, N. J., Kenik, E. A. and Carpenter, R. W., in Johari, O. (ed.), Scanning Electron Microscopy 1979, Vol. II, SEM Inc., AMF O'Hare, Chicago, IL, p. 581.Google Scholar
5 Goldstein, J. I., Costley, J. L., Lorimer, G. M. and Reed, S. J. B., in Johari, O. (ed.), Scanning Electron Microscopy 1977, Vol. I, Illinois Institute of Technology Research Institute, Chicago, IL, 1977, p. 315.Google Scholar
6 Raether, H., Excitation of Plasmons and Interband Transitions by Electrons, Springer, Berlin, 1981.Google Scholar
7 Chan, I. Y. T., Carpenter, R. W., Varker, C. J., Chang, L. and Demer, L. J., Proc. 40th Annu. Electron Microscopy Society of America Meet., Washington, DC, 1982, Claitor's Publishing Division, Baton Rouge, LA, 1982, p. 500.Google Scholar
8 Ho, P. S., Rubloff, G. M., Lewis, J. E., Moruzzi, V. L. and Williams, A. R., Phys. Rev. B, 22 (1980) 4784.CrossRefGoogle Scholar
9 Bearden, J. A. and Burr, A. F., Handbook of Chemistry and Physics, Chemical Rubber Company, Cleveland, OH, 51st edn., 1970–1971, p. E–183.Google Scholar
10 Zaluzec, N. J., Atlas EL Spectra, 1981 (Argonne National Laboratory), available from Materials Science and Technology Division, Argonne National Laboratory, Argonne, IL 60439.Google Scholar
11 Ahn, C. C. and Krivanek, O. L., Atlas EL Spectra, Gatan, Warrendale, PA, 1983.Google Scholar
12 Kircher, C. J., Solid-State Electron., 14 (1971) 507.CrossRefGoogle Scholar
13 Goodnick, S. M., Gann, R. G., Ferry, D. K., Wilmsen, C. W. and Krivanek, O. L., Surf. Sci., 113 (198) 233.CrossRefGoogle Scholar