Hostname: page-component-76fb5796d-skm99 Total loading time: 0 Render date: 2024-04-26T15:52:27.799Z Has data issue: false hasContentIssue false
  • English
  • Français

Step Coverage Modeling of Thin Films Deposited by CVD Using Finite Element Method

Published online by Cambridge University Press:  15 February 2011

Ching-Yi Tsai  and
Seshu B. Desu
Ching-Yi Tsai
Affiliation:
Department of Engineering Science and MechanicsVirginia Polytechnic Institute and State University, Blacksburg, VA, 24061
Seshu B. Desu
Affiliation:
Department of Materials EngineeringVirginia Polytechnic Institute and State University, Blacksburg, VA, 24061
Get access

Abstract

A two—dimensional finite element model was developed to study the step coverage of submicron trenches with arbitrary shape under chemical vapor deposition processes. Parameters that characterize the step coverage were found to be the surface Damkohler number, ratio of diffusion coefficients inside and outside of the trench, and aspect ratio of the trench geometry. Efforts were concentrated on studying the step coverage of SiO2 film deposited from SiH4/O2 precursors within rectangular shape trenches. The model predictions were found to be in good agreement with reported experimental results.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 250: Symposium R – Chemical Vapor Deposition of Refractory Metals and Ceramics II , 1991 , 65
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Cooke, M.J. and Harris, G., J. Vac. Sci. Technol., A, 7, 3217 (1989).Google Scholar
2. Yuuki, A., Matsui, Y., and Tachibana, K., Japanese J. of App. Phys., 28, 212 (1989).Google Scholar
3. Cale, T.S., Raupp, G.B. and Gandy, T.H., J. Appl. Phys., 68, 3645 (1990).Google Scholar
4. Petersen, Eugene E., Chemical Reaction Analysis, (Englewood Cliffs, New Jersey, 1965).Google Scholar
5. Chatterjee, S. and McConica, C.M., J. Electrochem. Soc., 137, 328 (1990).Google Scholar
6. Watanabe, Kazunori, and Komiyama, Hiroshi, J. Electrochem. Soc., 137, 1222 (1990).Google Scholar
7. Schlote, J., Schroder, K.W., and Drescher, K., J. Electrochem. Soc., 138, 2393 (1991).Google Scholar
8. Tai, Nyan-Hwa and Chou, Tsu-Wei, J. of the Amer. Cera. Soc., 72, 414 (1989).Google Scholar
9. Reddy, J.N., An Introduction to the Finite Element Method, (McGraw-Hill, New York, 1984).Google Scholar
10. Kawahara, Takaaki, Yuuki, Akimasa, and Matsui, Yasuji, Japanese J. of App. Phys., 30, 431 (1991)Google Scholar