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Film Stress in Pd2Si Layers of Varying Thickness

Published online by Cambridge University Press:  22 February 2011

Betty Coulman ,
Haydn Chen  and
Kenneth Ritz
Betty Coulman
Affiliation:
Dept. of Metallurgy and Mining Engineering and the Materials Research Laboratory, University of Illinois at Urbana-Champgaign, IL 61801.
Haydn Chen
Affiliation:
Dept. of Metallurgy and Mining Engineering and the Materials Research Laboratory, University of Illinois at Urbana-Champgaign, IL 61801.
Kenneth Ritz
Affiliation:
Philips Research Laboratory Sunnyvale, Signetics Corp., Sunnyvale, CA 94088
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Abstract

Little is known about the development of film stresses in very thin films (thicknesses of the order of a few hundred Angstroms or less). As interest intensifies in the technological application of ever smaller quantities of materials, the behavior of very thin. films will undergo increasing scrutiny. In this study, the film stresses in evaporated Pd films and Pd2Si films formed by reaction with the Si substrates at 250°C were measured for thicknesses ranging from 7 to 107 nm. Stresses were calculated from the substrate radii of curvature determined by X-ray diffraction topography techniques (Lang and double crystal) and Stoney's equation. Because film continuity cannot be taken for granted at low coverage, the films were examined by electron microscopy in an attempt to correlate their morphology with the observed stresses.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 47: Symposium C – Thin Films: The Relationship of Structure to Properties , 1985 , 155
Copyright
Copyright © Materials Research Society 1985

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References

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