Hostname: page-component-76fb5796d-vfjqv Total loading time: 0 Render date: 2024-04-26T16:51:44.323Z Has data issue: false hasContentIssue false
  • English
  • Français

Structural Defects in Laser Annealed Arsenic Implanted Silicon

Published online by Cambridge University Press:  26 February 2011

J. M. Tonnerre ,
M. Matsuura ,
G. S. Cargill III  and
L. W. Hobbs
J. M. Tonnerre
Affiliation:
IBM Research Division, T. J. Watson Research Center, Yorktown Ileights, NY 10598
M. Matsuura
Affiliation:
IBM Research Division, T. J. Watson Research Center, Yorktown Ileights, NY 10598
G. S. Cargill III
Affiliation:
IBM Research Division, T. J. Watson Research Center, Yorktown Ileights, NY 10598
L. W. Hobbs
Affiliation:
MIT, Dept. of Materials Science and Engineering, Cambridge, MA 02139
Get access

Abstract

Laser annealed arsenic implanted silicon specimens with doses ranging from 6×1015 to 7×1016 As/cm 2 have been investigated by transmission electron microscopy (TEM) and double crystal xray diffractometry (DCD). For the highest implant dose, laser powers ranging from 1.1 to 2.2 J/cm 2 have been used. Experimental observations show two new features for this kind of specimen. First, in some cases, TEM micrographs evidence small (˜50Å diameter) precipitate-like defects and/or dislocation loops confined within the heavily doped region. Second, in some cases, DCD shows a positive strain in addition to the negative strain attributed to 90% As in substitutional sites. X-ray rocking-curve simulations reveal that the negative strain drops to zero around 1000Å before the end of the As distribution. This might be related to the presence of Si interstitials in the deepest region of the As distribution.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 209: Symposium K – Defects in Materials , 1990 , 505
Copyright
Copyright © Materials Research Society 1991

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Laser Annealing of Semiconductors, edited by Poate, J. M. and Mayer, J. W., (Academic Press, New-York, 1982).Google Scholar
2. Pulsed Laser Annealing of Semiconductors, edited by Wood, R. F., White, C. W. and Young, R. T., Vol. 23 of Semiconductors and Metals, (Academic Press, New York, 1984).Google Scholar
3. Pandey, K. C., Erbil, A., Cargill III, G. S., Boehme, R. F. and Vanderbilt, D., Phys. Rev. Lett. 61, 1282 (1988).CrossRefGoogle Scholar
4. Armigliato, A., Nobili, D., Sonmi, S., Bourret, A. and Werner, P., J. Electrochem. Soc. 133, 2560 (1986).Google Scholar
5. Parisini, A., Bourret, A. and Armigliato, A., in Microscopy of Semiconducting Materials 1987, Inst. Phys. Conf. Ser. 87 (Institute of Physics, Oxford, 1987) pp. 491–497.Google Scholar
6. Parisini, A., Bourret, A., Armigliato, A., Servidori, M., Solmi, S., Fabbri, R., Regnard, J. R. and Allain, J. L., J. Appl. Phys. 67, 2320 (1990).Google Scholar
7. Cullis, A. G., Weber, H-. C. and Chew, N. G., Appl. Phys. Lett. 36, 547 (1980).CrossRefGoogle Scholar
8. Narayan, J., Flechter, J. and Eby, J. in Defects in Semiconductors, edited by Narayan, J. and Tan, T.Y. (Mater. Res. Soc. Proc. 2 1981), pp. 409–418.Google Scholar
9. White, C. W., Pronko, P. P., Wilson, S. R., Appleton, B. R., Narayan, J. and Young, R. T., J.Appl. Phys. 50, 3261 (1979).Google Scholar
10. Ziegler, J. F., Biersack, J.P. and Littmark, V., in The Stopping Power of Ions in Matter, Vol. 1,edited by Ziegler, J.F. (Pergamon, New York, 1985), p. 202;Google Scholar
and Ziegler, J.F., private communication.Google Scholar
11. White, C. W., Wilson, S. R., Appleton, B. R. and Young, F. W. Jr., J. Appl. Phys. 5 1, 738 (1980).Google Scholar
12. Narayan, J. in Defects in Semiconductors II, edited by Mahajan, S. and Corbett, J. W. (Mater.Res. Soc. Proc. 14, 1983), pp. 491–504.Google Scholar
13. Cargill III, G. S., Angilello, J. and Kavanagh, K. L., Phys. Rev. Lett. 61, 1748 (1988).Google Scholar
14. Bowen, D. K., Tanner, B. K., Loxley, N., Cooke, L. and Capano, M. A., presented at MRS Fall Meeting, Boston, MA, 1990 (Symp. J: Advances in Surface and Thin Film Diffraction).Google Scholar
15. Larson, B. C. and Barhorst, J. F., J. Appl. Phys. 51, 3181 (1980).CrossRefGoogle Scholar