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Role of Surface and Growth-Zone Reactions in the Formation Process of µc-Si:H

Published online by Cambridge University Press:  21 February 2011

A. Matsuda  and
T. Goto
A. Matsuda
Affiliation:
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba-shi, Ibaraki 305, Japan
T. Goto
Affiliation:
Nagoya University, Fuoi-cho, Chigusa-ku, Nagoya 464-01, Japan
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Abstract

The role of the surface reaction is discussed in the formation process of µc-Si:H in comparison to that of a-Si:H. It is suggested that the responsible radicals for the formation of µc-Si:H are SiH3 as same in the case of a-Si:H depositions. On the top film-growing surface, a lot of H atoms reach the surface during the course of the μc-Si:H growth giving rise to the change in the surface condition, i. e. the loss probability of SiH3 radicals is increased. At the same time, a full H-coverage of the surface is expected which enhances the surface diffusion of SiH3 radicals, leading to the appearance of a gc nucleus. Moreover, it is speculated that the reaction in the growth zone is not necessary for the nucleation process in µc-Si:H.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 164: Symposium H – Materials Issues in Microcrystalline Semiconductors , 1989 , 3
Copyright
Copyright © Materials Research Society 1990

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References

1. Matsuda, A., J. Non-Cryst. Solids, 59&60 767 (1983).Google Scholar
2. Veprek, S., Chimia 34 489 (1980), and S. Veprek, Z. Iqbal, H.R. Oswald and A.P. Webb, J Phys. C 14 295 (1981).Google Scholar
3. Tsai, C.C., Amorphous Silicon and Related Materials, Vol.1, ed. Fritzsche, H. (World Sci. Pub., Singapore, 1989) p. 123.Google Scholar
4. Shibata, N., Fukada, K., Ohtoshi, H., Hanna, J., Oda, S. and Shimizu, I., Mat. Res. Soc. Symp. Proc. 95 225 (1987).Google Scholar
5. Itabashi, N., Kato, K., Nishiwaki, N., Goto, T., Yamada, C. and Hirota, E., Jpn. J. Appl. Phys., 22 L1565 (1988).Google Scholar
6. Tsai, C.C., Knights, J.C., Chang, G. and Wacker, B., J. Appl. Phys., 59 2998 (1986).Google Scholar
7. Matsuda, A., Nomoto, K., Takeuchi, Y., Suzuki, A., Yuuki, A. and Perrin, J., to be published in Surf. Sci.Google Scholar
8. Matsuda, A. and Tanaka, K., J. Appl. Phys., 60 2351 (1986).Google Scholar
9. Yuuki, A., Matsui, Y. and Tachibana, K., Jpn. J. App. Phys., 28 212 (1989).Google Scholar