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High Resolution Tem Studies of Defects Near Si-SiO2 Interface

Published online by Cambridge University Press:  21 February 2011

J. H. Mazur  and
J. Washburn
J. H. Mazur
Affiliation:
Materials and Molecular Research DivisionLawrence Berkeley LaboratoryUniversity of CaliforniaBerkeley, California 94720
J. Washburn
Affiliation:
Materials and Molecular Research DivisionLawrence Berkeley LaboratoryUniversity of CaliforniaBerkeley, California 94720
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Abstract

Small defects with habit parallel to {100} and {311} matrix planes were observed using high resolution transmission electron microscopy (HREM) within 100 nm from the Si-Si02 interfaces after one step oxidation in dry O2 at 900°C, 1000°C and 1150°C of Czochralski (CZ) grown [100] p type boron doped, 1.5 − 20 Ω cm Si wafers with concentrations of oxygen1.4 × 10 18cm−3 and carbon 4. − 10. × 10 16 cm−3.The defects were less than 10 nm wide and I nm thick. The {100} and {311} defect are interpreted tentatively as thin silica plateletes and {311} stacking faults respectively. Distribution of defects near the interface was random although their density appeared to be lower for higher oxidation temperatures. It is not yet clear whether the defects were formed during the oxidation treatments or were present near the surfaces of the asreceived wafers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 31: Symposium N – Electron Microscopy of Materials , 1983 , 105
Copyright
Copyright © Materials Research Society 2006

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References

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