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Formation and Electrical Transport Properties of Nickel Silicide Synthesized by Metal Vapor Vacuum Arc Ion Implantation

Published online by Cambridge University Press:  14 March 2011

X. W. Zhang ,
S. P. Wong ,
W. Y. Cheung  and
F. Zhang
X. W. Zhang
Affiliation:
Department of Electronic Engineering, The Chinese University of Hong Kong, Shatin, N. T., Hong Kong, P. R. China
S. P. Wong
Affiliation:
Department of Electronic Engineering, The Chinese University of Hong Kong, Shatin, N. T., Hong Kong, P. R. China
W. Y. Cheung
Affiliation:
Department of Electronic Engineering, The Chinese University of Hong Kong, Shatin, N. T., Hong Kong, P. R. China
F. Zhang
Affiliation:
Department of Electronic Engineering, The Chinese University of Hong Kong, Shatin, N. T., Hong Kong, P. R. China
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Abstract

Nickel disilicide layers were prepared by nickel ion implantation into silicon substrates using a metal vapor vacuum arc ion source at various beam current densities to an ion dose of 6×1017 cm−2. Characterization of the as-implanted and annealed samples was performed using Rutherford backscattering spectrometry, x-ray diffraction, electrical resistivity and Hall effect measurements. The temperature dependence of the sheet resistivity and the Hall mobility from 30 to 400 K showed peculiar peak and valley features varying from sample to sample. A two-band model was proposed to explain the observed electrical transport properties.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 611: Symposium C – Gate Stack & Silicide Issues in Silicon Processing , 2000 , C6.5.1
Copyright
Copyright © Materials Research Society 2000

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References

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