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Multilevel Nonvolatile Memories Based on Nanowire / Molecular Wire Heterostructures

Published online by Cambridge University Press:  21 March 2011

Chao Li ,
Wendy Fan ,
Bo Lei ,
Daihua Zhang ,
Jie Han  and
M. Meyyapan
Chao Li
Affiliation:
Chongwu Zhou Department of Electrical Engineering – Electrophysics, University of Southern California, Los Angeles, CA 90089, U. S. A.
Wendy Fan
Affiliation:
Eloret Corporation, MS 229-1, NASA Ames Research Center, Moffett Field, CA 94035, U.S.A.
Bo Lei
Affiliation:
Chongwu Zhou Department of Electrical Engineering – Electrophysics, University of Southern California, Los Angeles, CA 90089, U. S. A.
Daihua Zhang
Affiliation:
Chongwu Zhou Department of Electrical Engineering – Electrophysics, University of Southern California, Los Angeles, CA 90089, U. S. A.
Jie Han
Affiliation:
Eloret Corporation, MS 229-1, NASA Ames Research Center, Moffett Field, CA 94035, U.S.A.
M. Meyyapan
Affiliation:
Eloret Corporation, MS 229-1, NASA Ames Research Center, Moffett Field, CA 94035, U.S.A.
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Abstract

Nonvolatile nanoscale memories with ultra-long retention times have been demonstrated for both binary and multilevel applications. These devices were based on nanowires functionalized with a self- assembled monolayer of redox active molecular wires, where the bit was represented by the charge stored in the redox molecules and the nanowire conductance was used as the readout. Our devices exhibited reliable operation, on/off ratios ∼ 104 and retention times ∼ one month, one of the longest retention times ever achieved with nanoscale devices. These devices were further tailored for multilevel data storage with appreciable noise margins, representing a new concept for functional devices. Our work clearly demonstrates the potential of combining nanowires and molecular wires for superior performance.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 818: Symposium M – Nanoparticles and Nanowire Building Blocks-Synthesis, Processing, Characterization and Theory , 2004 , M12.7.1
Copyright
Copyright © Materials Research Society 2004

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