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Properties of Zr-Substituted (Ba,Sr)TiO3 Thin Films for Integrated Capacitors

Published online by Cambridge University Press:  10 February 2011

G. T. Stauf ,
P. S. Chen ,
W. Paw ,
J. F. Roeder ,
T. Ayguavives ,
J.-P. Maria  and
A. I. Kingon
G. T. Stauf
Affiliation:
Advanced Technology Materials, 7 Commerce Dr., Danbury, CT 06810, gstauf@atmi.com
P. S. Chen
Affiliation:
Advanced Technology Materials, 7 Commerce Dr., Danbury, CT 06810, gstauf@atmi.com
W. Paw
Affiliation:
Advanced Technology Materials, 7 Commerce Dr., Danbury, CT 06810, gstauf@atmi.com
J. F. Roeder
Affiliation:
Advanced Technology Materials, 7 Commerce Dr., Danbury, CT 06810, gstauf@atmi.com
T. Ayguavives
Affiliation:
North Carolina State University Department of Materials Science and Engineering, Raleigh, NC 27695
J.-P. Maria
Affiliation:
North Carolina State University Department of Materials Science and Engineering, Raleigh, NC 27695
A. I. Kingon
Affiliation:
North Carolina State University Department of Materials Science and Engineering, Raleigh, NC 27695
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Abstract

There has been significant interest recently in use of BaSrTiO3 (BST) thin films for integrated capacitors; these devices have benefits for high frequency operations, particularly when high levels of charge or energy storage are required. We discuss the electrical properties of BST thin films grown by metalorganic chemical vapor deposition (MOCVD) which make them suitable for these applications, as well as the impact of processing conditions such as growth temperature on specific film properties. We have also examined addition of Zr in amounts ranging up to 20% to the BST films. X-Ray diffraction indicates that the Zr is incorporated into the BST lattice. Voltage withstanding capability, leakage and dielectric constant of the thin films have been measured as functions of deposition temperature and Zr content. Addition of Zr to BST films increases breakdown voltages by as much as a factor of two, to approximately 2 MV/cm, raising their energy storage density values to levels approaching 30 J/cc. Charge storage densities of above 60 fF/µm2were also obtained.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 603: Symposium KK – Materials Issues for Tunable RF & Microwave Devices , 1999 , 131
Copyright
Copyright © Materials Research Society 2000

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References

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