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Electrical Characterization of Silicon With Buried Defects

Published online by Cambridge University Press:  26 February 2011

J. Honeycutt ,
Z. Radzimski ,
R. R. Kola ,
A. S. M. Salih  and
G. A. Rozgonyi
J. Honeycutt
Affiliation:
North Carolina State University, Department of Materials Science and Engineering, Raleigh, NC 27695-7916
Z. Radzimski
Affiliation:
North Carolina State University, Department of Materials Science and Engineering, Raleigh, NC 27695-7916
R. R. Kola
Affiliation:
North Carolina State University, Department of Materials Science and Engineering, Raleigh, NC 27695-7916
A. S. M. Salih
Affiliation:
North Carolina State University, Department of Materials Science and Engineering, Raleigh, NC 27695-7916
G. A. Rozgonyi
Affiliation:
North Carolina State University, Department of Materials Science and Engineering, Raleigh, NC 27695-7916
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Abstract

Depth-dependent electrical characterization of epitaxial silicon extrinsically gettered with intentionally introduced misfit dislocations is described. To study the effect of buried defects on minority carrier lifetime, a modified Zerbst analysis of the MOS capacitance vs. time response was used to determine generation lifetime as a function of space charge region width. In addition, SEMEBIC imaging at different electron beam energies and EBIC imaging of cross-sections were used to investigate the depth-dependent electrical behavior of these materials.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 104 , 1987 , 121
Copyright
Copyright © Materials Research Society 1988

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References

REFERENCES

1.Salih, A. S.M., Kim, H. J., Davis, R. F. and Rozgonyi, G. A., Appl. Phys. Lett. 46, 419 (1985).Google Scholar
2.Salih, A. S. M., Ryu, J. S., Rozgonyi, G. A., and Bean, K. E., J. Electrochem. Soc. 133, 475 (1986).Google Scholar
3.Salih, A. S. M., Radzimski, Z., Honeycutt, J., and Rozgonyi, G. A., Appl. Phys. Lett. 1678 (1987).Google Scholar
4.Radzimski, Z., Honeycutt, J., and Rozgonyi, G. A., IEEE Trans. Elec. Dev.ED 35, 80 (1988)Google Scholar
5.Zerbst, M., Z. Angew. Phys. 22, 30 (1966)Google Scholar